1.0 Page 1 ECOC 2005 Proceedings - Vol.3 Paper We4.P.029 Laterally Coupled DFB Lasers
Based on InAs/lnP-QDash Structures for Broadband Applications w. Kaiser, K. Mathwig, S …

We demonstrate a widened ultrabroad-stimulated emission in InAs/InAlGaAs quantum-dash
laser using the postgrowth lattice-intermixing technique. The 100 nm wavelength blue …

We investigate in detail the influence of the tunneling-injection design on the device
performances of InAs/InP QDashes-based broad-area lasers. Using optimum design, high …

This paper summarizes recent advances on InAs/InP mode-locked quantum dashes lasers
operating in the 1.5 µm wavelength range. In particular, this paper will address two main …

The authors demonstrate the generation of ultrabroadband stimulated emission in the quasi-
zero-dimensional In As∕ In Al Ga As quantum-dash laser grown on InP substrate. The laser …

We demonstrate a novel idea of potentially-compact and cost-effective multiwavelength
emitter using a single broadband semiconductor quantum-dash laser device coupled with …

A monolithically integrated semiconductor laser-optical amplifier is demonstrated with a dual-
sectioned InAs/InP quantum-dash device showing a 56% reduction in the threshold …

The tolerance to external optical feedback of p-type doped InAs/InP quantum-dash-based
distributed feedback DFB lasers is investigated for different values of the Bragg-grating …

The study of injection locking characteristics was performed on an InAs Quantum Dash
(QDash) semiconductor laser for the first time. The linewidth enhancement factor (α …

We report the improvement of~ 1.62-mum wavelength InAs-InAlGaAs quantum-dash-in-
asymmetric-well laser performance using rapid thermal annealing. After the postgrowth …