Tbit/s optical interconnects based on low linewidth quantum-dash lasers and coherent detection

V Vujicic, A Anthur, V Panapakkam, R Zhou… - CLEO: Science and …, 2016 - opg.optica.org
Tbit/s Optical Interconnects Based on Low Linewidth Quantum-Dash Lasers and Coherent
Detection Page 1 SF2F.4.pdf CLEO:2016 İ OSA 2016 Tbit/s Optical Interconnects Based on Low …

Self-Injection Locked L–band Quantum-dash Laser Diode as a Source for Indoor Optical Wireless Communication

MA Shemis, EA Alkhazraji, MTA Khan… - Asia Communications …, 2017 - opg.optica.org
Self-Injection Locked L–band Quantum-dash Laser Diode as a Source for Indoor Optical
Wireless Communication Page 1 M3G.5.pdf Asia Communications and Photonics Conference …

Quantum well lasers in telecommunications

JE Geusic, RL Hartman, U Koren… - AT&T Technical …, 1992 - Wiley Online Library
Quantum well (QW) lasers are semiconductor lasers that use the special two‐dimensional
physical properties of very thin semiconductor layers in their light emitting regions to …

Comparison of Noise Characteristics of InAs/InP Quantum Dash and Quantum Well Mode-locked Lasers

G Liu, PJ Poole, Z Lu, J Liu, Y Mao… - … Optical Materials and …, 2021 - opg.optica.org
This paper presents the comparison of noise properties of an InAs/InP quantum dash
(QDash) and quantum well (QW) mode-locked lasers. By comparing their relative intensity …

Ultra high repetition rate and very low noise mode locked lasers based on InAs/InP quantum dash active material

A Akrout, K Merghem, A Martinez… - … Indium Phosphide & …, 2009 - ieeexplore.ieee.org
Ultra high repetition rate and very low noise mode locked lasers based on InAs/InP quantum
dash active material Page 1 ULTRA HIGH REPETITION RATE AND VERY LOW NOISE …

Monolithic 1.58-micron InAs/InP quantum dash passively mode-locked lasers

CY Lin, YC Xin, NA Naderi… - … and Simulation of …, 2009 - spiedigitallibrary.org
Monolithic InAs quantum dash 1.58-micron passively mode-locked lasers grown on an InP
substrate are reported. A repetition rate of up to 18.5 GHz has been realized. The dashes-in …

High performance p-doped InAs tunnel injection quantum dash lasers on InP

Z Mi, J Yang, P Bhattacharya - 2006 International Conference …, 2006 - ieeexplore.ieee.org
We have investigated the molecular beam epitaxial growth and characteristics of p-doped
InAs tunnel injection quantum dash lasers on InP (001) substrates. Significantly improved …

DFB lasers with deeply etched vertical grating based on InAs–InP quantum-dash structures

K Mathwig, W Kaiser, A Somers… - IEEE Photonics …, 2007 - ieeexplore.ieee.org
Distributed feedback lasers with first-order vertical grating based on AlInGaAs-InAs-InP
quantum-dash lasers were fabricated by electron beam lithography and Cl 2-Ar reactive ion …

Multi-stack chirped InAs/InP quantum-dash structure as a tunable laser

E Alkhazraji, MS Alias, MZM Khan - Asia Communications and …, 2018 - opg.optica.org
Multi-stack Chirped InAs/InP Quantum-dash Structure as a Tunable Laser Page 1 This work was
supported by King Fahd University of Petroleum and Minerals through IN161029 grant. The …

Effect of P-doping on temperature and dynamic performances of 1550nm InAs/InP Quantum Dash based lasers

F Lelarge, R Brenot, B Rousseau… - … Indium Phosphide & …, 2009 - ieeexplore.ieee.org
The effect of p-doping on both temperature and dynamic performances of 1.55 mum
Quantum Dashes lasers is investigated in detail. A relaxation frequency up to 13.5 GHz and …