[引用][C] Monolithic 1.58-micron InAs

CY LIN, YC XIN, NA Naderi… - … of SPIE, the …, 2009 - Society of Photo-Optical …

100 Gb/s single channel transmission using injection-locked 1621 nm quantum-dash laser

MTA Khan, E Alkhazraji, AM Ragheb… - IEEE Photonics …, 2017 - ieeexplore.ieee.org
A single channel 100 Gb/s dual-polarization quadrature phase shift keying transmission
based on injection-locked broadband quantum-dash Fabry-Pérot laser, and employing …

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

MZM Khan, TK Ng, BS Ooi - Progress in Quantum Electronics, 2014 - Elsevier
The advances in lasers, electronic and photonic integrated circuits (EPIC), optical
interconnects as well as the modulation techniques allow the present day society to …

Low threshold, very low noise, high temperature operation of 1.55 μm InP-based Fabry-Perot quantum dashes-in-a-well (DWELL) lasers

P Resneau, M Calligaro, B Rousseau… - … Conference on Lasers …, 2007 - opg.optica.org
The gas source molecular beam (GSMBE) grown dashes-in-a-well devices presented here
is a separate confinement heterostructure (SCH) comprising six layers of InAs quantum …

Introduction to the feature issue on mid-infrared quantum cascade lasers

SL Chuang - IEEE Journal of Quantum Electronics, 2002 - scholar.archive.org
SEMICONDUCTOR lasers were invented in 1962, fol-lowed by the demonstration of double-
heterostructure and quantum-well lasers. Recently, the realization of quantumcascade (QC) …

[图书][B] Optoelectronic properties of type I indium gallium arsenide quantum cascade lasers with applications to optical modulation

RK Murawski - 2004 - search.proquest.com
Abstract Quantum Cascade Lasers (QCL) are unique unipolar conduction band devices
designed to emit in the mid infrared region (MIR). They have been employed very …

Low-threshold current density InAs quantum dash lasers on InP (100) grown by molecular beam epitaxy

D Zhou, R Piron, M Dontabactouny, O Dehaese… - Electronics Letters, 2009 - IET
Low-threshold current density InAs quantum dash lasers are demonstrated by reducing the
energy inhomogeneous broadening through an optimised double-cap technique. A …

Spectrally resolved dynamics of inhomogeneously broadened gain in InAs∕ InP1550nm quantum-dash lasers

D Hadass, R Alizon, H Dery, V Mikhelashvili… - Applied physics …, 2004 - pubs.aip.org
Spectrally resolved dynamics of inhomogeneously broadened gain in InAs∕InP1550nm
quantum-dash lasers | Applied Physics Letters | AIP Publishing Skip to Main Content …

1550nm directly modulated lasers for 10Gb/s SMF transmission up to 65km at 45° C with chirp optimized InAs/InP quantum dashes

N Chimot, F Lelarge, R Brenot, A Accard… - … and Exhibition on …, 2010 - ieeexplore.ieee.org
1550nm directly modulated lasers for 10Gb/s SMF transmission up to 65km at 45°C
with chirp optimized InAs/InP quantum Page 1 1550nm Directly Modulated Lasers for 10Gb/s …

[PDF][PDF] Static and dynamic properties of laterally coupled DFB lasers based on InAs/InP QDash structures

W Kaiser, K Mathwig, S Deubert, JP Reithmaier… - Electronics …, 2005 - kmathwig.com
Conclusion: We have reported on the fabrication and performance of laterally coupled DFB
lasers based on InP QDash gain media operating in the fibre optics wavelength range near …