Carrier profiling with fast Fourier transform scanning spreading resistance microscopy: A case study for Ge, GaAs, InGaAs, and InP

O Dixon-Luinenburg, U Celano, W Vandervorst… - Ultramicroscopy, 2019 - Elsevier
Quantitative scanning spreading resistance microscopy is currently a powerful method for
carrier profiling in scaled nanoelectronic devices. Faced with the further reduction of …
被引用次数：2 相关文章

Carrier profiling with fast Fourier transform scanning spreading resistance microscopy: A case study for Ge, GaAs, InGaAs, and InP.

O Dixon-Luinenburg, U Celano, W Vandervorst… - …, 2019 - europepmc.org
Quantitative scanning spreading resistance microscopy is currently a powerful method for
carrier profiling in scaled nanoelectronic devices. Faced with the further reduction of …

[引用][C] Carrier profiling with Fast Fourier transform scanning spreading resistance microscopy: A case study for Ge, GaAs, InGaAs, and InP

O Dixon-Luinenburg, U Celano, W Vandervorst… - 2019 - imec-publications.be
Carrier profiling with Fast Fourier transform scanning spreading resistance microscopy: A
case study for Ge, GaAs, InGaAs, and InP Toggle navigation My submissions Login Toggle …

Carrier profiling with fast Fourier transform scanning spreading resistance microscopy: A case study for Ge, GaAs, InGaAs, and InP

O Dixon-Luinenburg, U Celano… - …, 2019 - pubmed.ncbi.nlm.nih.gov
Quantitative scanning spreading resistance microscopy is currently a powerful method for
carrier profiling in scaled nanoelectronic devices. Faced with the further reduction of …