An 18 dBm 155-180 GHz SiGe power amplifier using a 4-way T-junction combining network
M Kucharski, HJ Ng, D Kissinger - ESSCIRC 2019-IEEE 45th …, 2019 - ieeexplore.ieee.org
M Kucharski, HJ Ng, D Kissinger
ESSCIRC 2019-IEEE 45th European Solid State Circuits Conference …, 2019•ieeexplore.ieee.orgThis paper presents a 4-way power amplifier (PA) using a T-junction network for efficient
power combining. The circuit was implemented using a 130 nm SiGe BiCMOS technology
with f T/f MAX= 300/500 GHz. The PA achieves 30.2 dB peak linear gain at 170 GHz and
more than 27.2 dB in 155-180 GHz range. At 170 GHz the circuit delivers up to 18 dBm
saturated output power (P SAT) with output referred 1 dB compression point (OP 1dB) at
15.6 dBm, which to the best author's knowledge, are the highest among other previously …
power combining. The circuit was implemented using a 130 nm SiGe BiCMOS technology
with f T/f MAX= 300/500 GHz. The PA achieves 30.2 dB peak linear gain at 170 GHz and
more than 27.2 dB in 155-180 GHz range. At 170 GHz the circuit delivers up to 18 dBm
saturated output power (P SAT) with output referred 1 dB compression point (OP 1dB) at
15.6 dBm, which to the best author's knowledge, are the highest among other previously …
This paper presents a 4-way power amplifier (PA) using a T-junction network for efficient power combining. The circuit was implemented using a 130 nm SiGe BiCMOS technology with f T /f MAX = 300/500 GHz. The PA achieves 30.2 dB peak linear gain at 170 GHz and more than 27.2 dB in 155-180 GHz range. At 170 GHz the circuit delivers up to 18 dBm saturated output power (P SAT) with output referred 1 dB compression point (OP 1dB) at 15.6 dBm, which to the best author’s knowledge, are the highest among other previously reported silicon-based PAs above 140 GHz.
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