Quantitative scanning spreading resistance microscopy on n-type dopant diffusion profiles in germanium and the origin of dopant deactivation

JK Prüßing, G Hamdana, D Bougeard… - Journal of Applied …, 2019 - pubs.aip.org
… This P-doped Ge structure serves as a calibration sample to … profile was obtained after Sb
diffusion at 700 C for 3 h. This … Ge structure shows a constant carrier profile representative for …

A scanning spreading resistance microscopy study on a laser-doped selective phosphorous emitter

J Weber, A Brand - IEEE Journal of Photovoltaics, 2020 - ieeexplore.ieee.org
… phosphorous dopants are measured via calibrated SSRM [5]. … It follows the pyramidal
structure of the surface. For two … We compare the simulated ECV profile and the profiles resulting …

Dopant Activation Depth Profiling for Highly Doped Si: P By Scanning Spreading Resistance Microscopy (SSRM) and Differential Hall Effect Metrology (DHEM)

U Celano, L Wouters, A Franquet… - ECS …, 2022 - iopscience.iop.org
… and carrier concentration depth profiles using calibration3 to 1.16e20 #/cm 3 , as
measured with spreading resistance … SSRM profiles obtained for a n-type Si staircase structure

… Scanning Nonlinear Dielectric Microscopy with Stepwise dC/dV and dC/dz Imaging—Achieving Qualitative, Quantitative and Artifact-Free Carrier Density Profiling of …

T Yamaoka, S Hasumura, R Hirose… - … for Testing and …, 2018 - dl.asminternational.org
… of SSRM (Scanning Spreading Resistance Microscopy), SCM (… cantilever and quantitative
analysis using a calibration curve [2]. A … structures in deep sub-micron MOSFETs by scanning

Mapping conductance and carrier distributions in confined three-dimensional transistor structures

A Schulze, P Eyben, J Mody, K Paredis… - … Force Microscopy for …, 2019 - Springer
Scanning spreading resistance microscopy (SSRM) has … carrier profiling in aggressively
scaled 3D device structures … For this reason, calibration samples covering the entire carrier

Defect distribution in boron doped silicon nanostructures characterized by means of scanning spreading resistance microscopy

JK Prüßing, T Böckendorf, G Hamdana… - Journal of Applied …, 2020 - pubs.aip.org
… (SSRM) is able to detect charge carriers with two dimensional (… is to apply a SSRM scan
of a calibration sample with known … Boron profiles in Si bulk and nanopillar structures were …

Advanced Current–Voltage Model of Electrical Contacts to GaAs-and Ge-Based Active Silicon Photonic Devices

PY Hsieh, B O'Sullivan, A Tsiara… - … on Electron Devices, 2023 - ieeexplore.ieee.org
scanning spreading resistance microscopy (… calibration sample has multiple layers with
known carrier concentrations, determined by electrochemical capacitance-voltage (ECV) profiling

Measuring Techniques for the Semiconductor's Parameters

A Alberti, F Giannazzo, FL Via, S Lombardo… - Springer Handbook of …, 2022 - Springer
… As the resolution of CTEM microscopes is usually 2–3 Å, the atomic structure cannot be
resolved. … of measuring the carrier concentration profile, the mobility, and the carrier lifetime by …

Spreading resistance at the nano-scale studied by scanning tunneling and field emission spectroscopy

PSN Barimar, B Naydenov, J Li, JJ Boland - Applied Physics Letters, 2017 - pubs.aip.org
profile in semiconductors with high spatial resolution. … -SE ellipsometer calibrated by cross
sectional transmission electron … can be minimised to investigate the electronic structure of 5 …

Dopant activity for highly in-situ doped polycrystalline silicon: hall, XRD, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy  …

RC Germanicus, F Lallemand, D Chateigner… - Nano …, 2021 - iopscience.iop.org
… with a polycrystalline in situ doped structure, with a high (>10 20 at cm −3 ) phosphorus
dopant … SIMS depth profiles using Cs + primary ions at 10 keV energy. Calibration of the SIMS …