Investigating above-bandgap and below-bandgap optical transition in GaBiAs epilayers by photoreflectance spectroscopy
… C) by using photo-modulated reflectance (PR) spectroscopy and photoluminescence (PL). …
the existing defects may be probed by optical techniques such as photoluminescence (PL). …
the existing defects may be probed by optical techniques such as photoluminescence (PL). …
Charge-Carrier Recombination in Dilute Bismuthide Semiconductors
J Veletas - 2021 - jlupub.ub.uni-giessen.de
… The investigation of the charge-carrier temperatures by means of photoluminescence spec…
Within this work photomodulated re ectance (PR) as well as photomodulated transmittance (…
Within this work photomodulated re ectance (PR) as well as photomodulated transmittance (…
Carrier dynamics in (Ga, In)(Sb, Bi)/GaSb quantum wells for laser applications in the mid-infrared spectral range
… QW absorption edge, indicating the exciton localisation beneath the QW mobility edge. The
… carrier dynamics in the QWs probed directly by the time-resolved photoluminescence and …
… carrier dynamics in the QWs probed directly by the time-resolved photoluminescence and …
Propriedades ópticas de filmes semicondutores GaAsBi e GaSbBi
D De Souza - 2022 - repositorio.ufscar.br
… , Raman and low temperature photoluminescence (PL). We … of photon-generated carriers
can be disregarded for laser … doping that modifies carrier occupation at the localized states. As …
can be disregarded for laser … doping that modifies carrier occupation at the localized states. As …
Theoretical analyses of the carrier localization effect on the photoluminescence of In-rich InGaAs layer grown on InP
… In this work, the temperature dependent photoluminescence (TDPL) … by Localized State
Ensemble (LSE) model. A comparison between the semi-empirical evolution of luminescence …
Ensemble (LSE) model. A comparison between the semi-empirical evolution of luminescence …
Enhancement of photoluminescence of GaAsBi quantum wells by parabolic design of AlGaAs barriers
S Pūkienė, M Karaliūnas, A Jasinskas… - …, 2019 - iopscience.iop.org
… Probe convergence semi-angle was set to 9.3 mrad, allowing to achieve ∼2.0 Å spatial … by
photomodulated transmittance and PL techniques of strong carrier localization phenomena in …
photomodulated transmittance and PL techniques of strong carrier localization phenomena in …
Assessing the nature of the distribution of localised states in bulk GaAsBi
… Carrier localization in GaBiAs probed by photomodulated transmittance and photoluminescence.
Journal of Applied Physics 106, 023518–6, https://doi.org/10.1063/1.3168429 (2009). …
Journal of Applied Physics 106, 023518–6, https://doi.org/10.1063/1.3168429 (2009). …
Optical properties of GaAs1− xBix/GaAs quantum well structures grown by molecular beam epitaxy on (100) and (311) B GaAs substrates
… epitaxy is investigated by photomodulated reflectance (PR) … than [100] enhances the
photoluminescence (PL) intensity, … 100 W halogen lamp as a probe source at room temperature. …
photoluminescence (PL) intensity, … 100 W halogen lamp as a probe source at room temperature. …
Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment
R Kudrawiec, J Kopaczek, O Delorme… - Journal of Applied …, 2019 - pubs.aip.org
… photoluminescence spectra in order to confirm the type-I character of the studied QWs and
show very weak carrier localization … μm was used as the probe and a continuous wave laser (…
show very weak carrier localization … μm was used as the probe and a continuous wave laser (…
Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1− xBix layers grown by Molecular Beam Epitaxy
… The photoluminescence (PL) and Raman spectra have … can overcome the lower barriers,
and the transmission … optical properties of n-type GaBiAs layers grown under similar conditions …
and the transmission … optical properties of n-type GaBiAs layers grown under similar conditions …