… semiconductor laser sources as well as broadband and polarization insensitive semiconductor
optical amplifiers based on the InGaASP/InP … for the asymmetric multi-quantum well SOA. …

… The stretch–strain MQW system based on InGaAsP/InP has … of asymmetrical multiple quantum
well semiconductor optical … Analysis of a semiconductor optical amplifier with polarization…

… and the details of the measurements used to characterize them. Subsequently I discuss and
… quantum wells, which limits effects of self-heating [83]. Volkov’s team made an asymmetric …

… the characterization of the state-of-the-art In(Ga)As/GaAs quantum dot (QD) material grown
by molecular beam epitaxy for optical … in semiconductor optical amplifiers (SOAs) and lasers. …

… tunable nonlinear optical interactions, such as four-wave mixing. In this study, we have
performed a dispersion analysis for both InGaAsP/InP and AlGaAsSb/GaSb optical waveguides …

… (DFB) structure is based on an InGaAsP/InP strained-layer multi-quantum well (MQW). The
LD is … A bifurcation analysis of the model reveals that, the SWs appear from the same Hopf …

… improved the noise characteristics and transmission loss of … of InGaAsP-InP QWs, which
achieved a fiber-to-fiber gain of 13 … In a multi-quantum-well (MQW) SOA, thin QWs can be used …

… develop the few mode semiconductor optical amplifier (FMSOA) … Lastly, an asymmetric
supermode converter is demonstrated by … characterization of FM degenerate FWM in an FM SOA. …

… Semiconductor Optical Amplifier active layer stack based on InGaAsP/InP quantum well gain
media. The … Further characterization of the passive mode-locking operation regime of the …

… 4, which is one of the important characteristics for manufacturing stable and monochromatic
lasers. We obtained optical gains of 10625 cm −1 , 11845 cm −1 , and 12771 cm −1 …