Ultrafast photocarrier dynamics in Fe-implanted InGaAs polycrystalline photoconductive materials
… annealed Fe ions implanted InGaAsP/InP photoconductive … recrystallized ion-implanted
InGaAs films. Adding band-to-band radiative and Auger recombination channels to the evolution …
InGaAs films. Adding band-to-band radiative and Auger recombination channels to the evolution …
Terahertz emitters and detectors made on high-resistivity InGaAsP: Fe photoconductors
… process is not uniform throughout the thickness of the InGaAsP/InP heterostructure, in the …
al., “Microstructural evolution of a recrystallized Fe-implanted InGaAsP/InP heterostructure,” …
al., “Microstructural evolution of a recrystallized Fe-implanted InGaAsP/InP heterostructure,” …
[HTML][HTML] High Resistivity and High Mobility in Localized Beryllium-Doped InAlAs/InGaAs Superlattices Grown at Low Temperature
D Dai, H Liu, X Su, X Shang, S Li, H Ni, Z Niu - Crystals, 2023 - mdpi.com
… a Fe-doped InGaAsP material system, and the researchers showed that the nonuniformity
of resistivity is likely caused by the recrystallization process in the InGaAsP/InP heterostructure…
of resistivity is likely caused by the recrystallization process in the InGaAsP/InP heterostructure…