… (a) XTEM image of 10 layers of quantum dots, where each layer contains 10 vertical
stacks of 0.5 ML InAs/GaAs. (b) High-resolution XTEM image of a single quantum dot layer …

… employ ion implantation as an effective post-growth technique … of uniform self-assembled
InAs/GaAs quantum dots (QDs) … option of tailoring the band gap by engineering the size of the …

… where E g QD is the strained QD material’s band gap energy, e n and h n are the confined
electron and hole energies, respectively. More details on the calculations can be found …

… peaks in coupled multilayer InAs/GaAs quantum dots by high temperature post growth annealing”
… to realize high performance QDIPs using bandgap engineering. These structures were …

… post-growth treatments, such as hydrogen irradiation, is important too. We address these
issues for self-assembled Ge quantum dots (QDs) that are co-implanted … -band-gap group-IV …

… The InAs/GaAs QDs in this work are grown using molecular … This layer used post-growth
processing to separate the … this work are smaller than the GaAs band gap energy (EG = 1.42 eV)…

… O-band emitting InAs/GaAs quantum dots were grown in an industrial MOCVD reactor on
300 mm diameter Ge-buffered Si (001) substrates. Morphological investigation by AFM showed …

… implantation and dielectric capping methods. Here, we report the effect of post-growth RTA
on the material characteristics by using … The increase in the QD band gap due to intermixing …

… Ion implantation-induced intermixing and IFVD are post-growth … spectra from quantum
dots with different bandgap energies, … InAs/GaAs quantum dot intermixing induced by proton …

… on thermal annealing, and ion implantation techniques [13,14… flush process to engineer the
InAs/GaAs QD size using CBE, … In addition to the obvious redshift induced by the band gap …