… nm) layer was deposited for forming ohmic contacts to n-GaN. … The temperature dependence
of GaN Schottky diodes was … 2 –V plots of the Ni-based Schottky diodes with and without …

… properties of Ni-based back-side Ohmic contacts formed by laser … integrated in the fabrication
of 650V SiC Schottky diodes. … 1a,b), a high temperature RTA process (900–1000 C) is …

… be applied to fabricate the ideal 4H–SiC Schottky diodes. … SBI at low temperatures (400
C–500 C), while the formation of both … The backside Ohmic contact was formed by Ni–W bilayer …

… barrier height, and on the deposition and post-deposition treatment … the structural evolution
of Ni-based Schottky contacts on β-… at 550 C for 30 s for ohmic contact formation. To form …

… more thermally stable than conventional Ni-based Schottkies on Ga 2 O … After ohmic metal
deposition, contact formation was … The Schottky diodes measured in this study were 210 μm in …

… a Schottky diode containing a metal–semiconductor Schottky … using Ni, and a triple layer of
Ti/Pt/Au was used for the ohmic … processing play a crucial role in the performance of the SiC …

… annealing treatment at an optimized temperature within a 800… The etching had only a small
influence on the Schottky contact … the Ohmic contact and the outer ones are Schottky contacts. …

… Ni-based metal structures have been also studied in order to form the low resistance ohmic
contact even under the low temperature … the formation of Ni-silicide by thermal treatment may …

… High temperature annealing of Ni and Pt Schottky diodes on … Figure 1(b) displays I–V
characteristics of ohmic contacts … However, Ni based alloys might be produced at the Ni/GaN …

… ) Schottky diodes on Al 0.25 Ga 0.75 N/GaN heterostructures grown on Silicon have been
investigated using temperature … An ideality factor (η) of 1.3 at room temperature (RT) signified …