… of the optical devices.1 High performance and reliable semiconductor laser diodes (LDs)
are pivotal for digital processing systems, especially for applications in optical communications …

… of fundamental concepts to the industry for development and technological applications. …
integration of a GaInAsP/InP double-hetero (DH) LD grown on a wafer-bonded InP/Si substrate. …

… InP has higher band gap than the lattice matched GaInAsP active layer, absorption losses
inside the device … and in most applications a series of different wavelength devices is needed …

… of fundamental concepts to the industry for development and technological applications. …
In conclusion, a GaInAsP/InP membrane structure was bonded on a Si substrate via a-Si …

… , it is GaInAsP solid solutions lattice-matched to InP that … use of a system of GaInAsP solid
solutions obtained on an InP … The GaInAsP and InP materials investigated in this study have …

… We have fabricated the InP/Si substrate using a direct … deposited GaInAsP/InP double
heterostructure layers on this InP/Si … -temperature lasing of the GaInAsP LD on the InP/Si substrate …

… of fundamental concepts to the industry for development and technological applications. …
The high-external differential quantum efficiency operation of a GaInAsP/InP membrane …

… The additional GaInAsP … applications, it serves nevertheless to establish the special atom-like
nature of the QD gain material, which is responsible, in turn, for the high-quality, application…

… of fundamental concepts to the industry for development and technological applications. …
Finally, the integration of an epitaxially grown GaInAsP–InP DH laser on an InP/Si substrate was …

… InP buffer layers were formed before GaInAsP layers deposition, the molar flows of the
precursors during InP … and electronic device applications (2ed. Taylor and Francis/CRC Press) p …