2 µm photonics and optoelectronics is promising for potential applications such as optical
communications, LiDAR, and chemical sensing. While the research on 2 µm detectors is on …

The authors demonstrate the generation of ultrabroadband stimulated emission in the quasi-
zero-dimensional In As∕ In Al Ga As quantum-dash laser grown on InP substrate. The laser …

The authors report the demonstration of the bandgap-tuned InAs quantum dash broadband
laser with widened laser emission linewidth at room temperature using postgrowth …

We report on the demonstration of 50 nm (full-width at half-maximum) broadband stimulated
emission from a chirped AlGaInAs barrier thickness multi-stack InAs/InP quantum dash …

In this paper, we assessed the effect of additionally broadened quantum dash (Qdash)
optical transitions in the multi-stack dash-in-a-well laser structure at both, material and …

Pulse generation at 346 GHz using a passively mode locked quantum-dash-based laser at 1.55
μm | Applied Physics Letters | AIP Publishing Skip to Main Content Umbrella Alt Text Umbrella …

10 GHz MODULATION BANDWIDTH OF 1550nm InAs/InP QUANTUM DASH BASED
LASERS Page 1 10 GHz MODULATION BANDWIDTH OF 1550nm InAs/InP QUANTUM …

The first self-assembled InAs quantum dash lasers grown by molecular beam epitaxy on InP
(001) substrates are reported. Pulsed room-temperature operation demonstrates …

We have studied the molecular beam epitaxial growth and characteristics of p-doped InAs
tunnel injection quantum-dash lasers on InP (001) substrates. Significantly improved …

Quantum dot and quantum dash (QDash) lasers exhibit lower threshold, less temperature
sensitivity, and larger modulation bandwidths than the conventional quantum well lasers …