Scanning spreading resistance microscopy (SSRM) is a powerful technique for quantitative
two-and three-dimensional carrier profiling of semiconductor devices with sub-nm spatial …

Within this study, the authors have investigated scanning spreading resistance microscopy
(SSRM) measurements on silicon samples under different environmental conditions. The …

The spatial resolution of scanning spreading resistance microscopy (SSRM) has been
investigated experimentally by using dedicated test structures composed of a series of ultra …

In this work, the authors investigate the present capabilities of scanning spreading
resistance microscopy (SSRM) to map the carrier distribution in fin field-effect-transistor …

The performance of nanoelectronic devices critically depends on the distribution of charge
carriers inside such structures. High-vacuum scanning spreading resistance microscopy (HV …

As semiconductor devices are scaling down, understanding the two-dimensional carrier
profile is vital to improving the overall performance of various silicon devices, and crucial …

Quantitative scanning spreading resistance microscopy is currently a powerful method for
carrier profiling in scaled nanoelectronic devices. Faced with the further reduction of …

The continuous down scaling of the semiconductor devices demands adequate
characterization techniques, able to provide quantitative information with high spatial …

In this work, cross-sectional scanning spreading resistance microscopy (SSRM) is used to
profile carriers in quantum wells (QWs). The investigated structures consist of InGaAs wells …

Recent developments in scanning spreading resistance microscopy have enabled to move
the technique from the laboratory phase to a commercially available method for 2D-carrier …