Diffusion profiles of arsenic and antimony in undoped and carbon doped germanium (Ge),
respectively, were analysed by means of scanning spreading resistance microscopy …

Diffusion experiments of phosphorus (P), arsenic (As), and antimony (Sb) in high purity
germanium (Ge) were performed at temperatures between 600 and 920 C⁠. Secondary ion …

The diffusion of self-atoms and n-type dopants such as phosphorus, arsenic, and antimony
in germanium was studied by means of isotopically controlled multilayer structures doped …

We assessed the equilibrium concentration (CV eq) and diffusivity (DV) of vacancies (V) in
Ge as a function of temperature from a detailed analysis of the diffusion behavior of Co in …

The diffusion and activation of n-type impurities (P and As) implanted into p-type Ge (100)
substrates were examined under various dose and annealing conditions. The secondary ion …

Diffusion of As into Ge from a GaAs overlayer deposited on p-type Ge substrates has been
studied by means of secondary ion mass spectrometry. A concentration-dependent diffusion …

We report arsenic and phosphorus diffusion experiments and activation related phenomena
in codoped germanium substrates utilizing conventional thermal annealing. Chemical …

Using high resolution secondary ion mass spectrometry (SIMS) measurements we have
studied the effects of germanium content on antimony diffusion in strained Si 1− x Ge x …

Recent experimental studies demonstrate a significant germanium (Ge) substrate loss and
consequently dopant loss even during low temperature annealing. Additionally, for …

Antimony sputter deposition and subsequent diffusion annealing in controlled atmosphere
was implemented on Ge wafers, for achieving an optimized n+ doping aimed at the final …