3D-carrier profiling and parasitic resistance analysis in vertically stacked gate-all-around Si nanowire CMOS transistors
P Eyben, R Ritzenthaler… - 2019 IEEE …, 2019 - ieeexplore.ieee.org
We have utilized the scalpel scanning spreading resistance microscopy (s-SSRM) technique
in order to successfully extract for the first time 3D carrier distributions into multi-channel …
in order to successfully extract for the first time 3D carrier distributions into multi-channel …
Investigation of gate-all-around silicon nanowire transistors for ultimately scaled CMOS technology from top-down approach
R Huang, R Wang - Frontiers of Physics in China, 2010 - Springer
The gate-all-around (GAA) silicon nanowire transistor (SNWT) is considered one of the best
candidates for ultimately scaled CMOS devices at the end of the technology roadmap. This …
candidates for ultimately scaled CMOS devices at the end of the technology roadmap. This …
Experimental investigations on channel backscattering characteristics of gate-all-around silicon nanowire transistors from top-down approach
In this letter, the channel backscattering characteristics and ballistic efficiency of gate-all-
around silicon nanowire transistors (SNWTs) are experimentally investigated. A modified …
around silicon nanowire transistors (SNWTs) are experimentally investigated. A modified …
Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm
In this paper, we report the first systematic study on electron mobility extraction in equilateral
triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 …
triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 …
Fabrication and characterization of gate-all-around silicon nanowires on bulk silicon
V Pott, KE Moselund, D Bouvet… - IEEE transactions on …, 2008 - ieeexplore.ieee.org
This paper reports on the top-down fabrication and electrical performance of silicon
nanowire (SiNW) gate-all-around (GAA) n-type and p-type MOSFET devices integrated on …
nanowire (SiNW) gate-all-around (GAA) n-type and p-type MOSFET devices integrated on …
Back bias impact on effective mobility of p-type nanowire SOI MOSFETs
BC Paz, M Cassé, S Barraud… - … 33rd Symposium on …, 2018 - ieeexplore.ieee.org
In this work we investigated the impact of back bias on the effective mobility of p-type Ω-gate
nanowire SOI MOSFETs. Evaluation is performed through both measurements and 3D …
nanowire SOI MOSFETs. Evaluation is performed through both measurements and 3D …
TCAD evaluation of the substrate bias influence on the carrier transport of Ω-gate nanowire MOS transistors with ultra-thin BOX
FE Bergamaschi, MA Pavanello - 2021 IEEE Latin America …, 2021 - ieeexplore.ieee.org
In this work, the effects of substrate biasing on the electrical behavior of n-type Ω-gate SOI
nanowire MOS transistors with thin buried oxide (BOX) and variable fin width are analyzed …
nanowire MOS transistors with thin buried oxide (BOX) and variable fin width are analyzed …
Performance and opportunities of gate-all-around vertically-stacked nanowire transistors at 3nm technology nodes
Gate-all-around (GAA) cylindrical channel Si nanowire field effect transistor (NW-FET)
devices have the potential to replace FinFETs in future technology nodes because of their …
devices have the potential to replace FinFETs in future technology nodes because of their …
Metal grain granularity induced variability in gate-all-around si-nanowire transistors at 1nm technology node
As predicted, 5nm technology is not going to be ready for production until 2025 and it will be
some sort of FinFET (possibly gate-all-around silicon nanowire or similar type of devices). It …
some sort of FinFET (possibly gate-all-around silicon nanowire or similar type of devices). It …
Multi-gate Si nanowire MOSFETs: Fabrication, strain engineering and transport analysis
M NAJMzADEH - 2012 - infoscience.epfl.ch
Multi-gate devices eg gate-all-around (GAA) Si nanowires and FinFETs are promising can-
didates for aggressive CMOS downscaling. Optimum subthreshold slope, immunity against …
didates for aggressive CMOS downscaling. Optimum subthreshold slope, immunity against …