Quantitative scanning spreading resistance microscopy is currently a powerful method for
carrier profiling in scaled nanoelectronic devices. Faced with the further reduction of …

Scanning spreading resistance microscopy (SSRM) is a powerful technique for quantitative
two-and three-dimensional carrier profiling of semiconductor devices with sub-nm spatial …

The performance of nanoelectronics devices critically depends on the distribution of active
dopants inside these structures. For this reason, dopant profiling has been defined as one of …

Quantitative carrier profiling represents a key element in the process development of future
nanoelectronic devices. During the last decade, scanning spreading resistance microscopy …

The continuous down scaling of the semiconductor devices demands adequate
characterization techniques, able to provide quantitative information with high spatial …

Two-dimensional carrier profiling using scanning spreading resistance microscopy (SSRM)
has recently been reported for Si-and InP-based structures. In this article, we report SSRM …

The performance of nanoelectronic devices critically depends on the distribution of charge
carriers inside such structures. High-vacuum scanning spreading resistance microscopy (HV …

Scanning spreading resistance microscopy (SSRM) is a carrier profiling method based on
atomic force microscopy (AFM), which has proven its power for two-dimensional …

Scanning spreading resistance microscopy is a two-dimensional carrier profiling technique
now widely used for the characterization of silicon (Si) devices as well as other …

This work presents the application of scanning spreading resistance microscopy (SSRM) for
the 2D doping profiling of advanced semiconductor devices with high spatial resolution. In …