Based on atomic force microscope (AFM), scanning capacitance microscopy (SCM) and
scanning spreading resistance microscopy (SSRM) have demonstrated high efficiency for …

Scanning capacitance microscopy (SCM) has been investigated on Ga doped ZnO staircase
multi‐layers grown by molecular beam epitaxy (MBE) and ZnO NWs grown by chemical bath …

ZnO/ZnO: Sb core-shell structured nanowires (NWs) were grown by the metal organic
chemical vapor deposition method where the shell was doped with antimony (Sb) in an …

Scanning spreading resistance microscopy (SSRM) was performed on non-intentionally
doped (nid) ZnO nanowires (NWs) grown by metal-organic chemical vapor deposition in …

Cross-sectional scanning capacitance microscopy (SCM) was performed on n-type ZnO
multi-layer structures homoepitaxially grown by molecular beam epitaxy method. Highly …

ZnO nanowires (NWs) are very attractive for a wide range of nanotechnological applications
owing to their tunable electron concentration via structural and surface defect engineering. A …

Single ZnO nanowires are configured as field effect transistors and their electrical properties
are characterized using scanning probe microscopy (SPM). Scanning surface potential …

Coaxially periodic ZnO/ZnMgO core-multishell nanowire (NW) heterostructures were grown
via a metal organic chemical vapor deposition method. We investigated their electrical …

Direct measurements on electrical characteristics have been carried out in situ inside a
scanning electron microscope using a multiple nanoprobe system on individual Sn O 2 …

As a II-VI compound semiconductor with a wide and direct band gap of 3.37 eV, ZnO
nanowires have attracted intensive research effort due to their unique properties and …