The performance of nanoelectronics devices critically depends on the distribution of active
dopants inside these structures. For this reason, dopant profiling has been defined as one of …

A new atomic force microscopy (AFM)-based technique named fast Fourier transform
scanning spreading-resistance microscopy (FFT-SSRM) has been developed. FFT-SSRM …

Scanning spreading resistance microscopy (SSRM) is a powerful technique for quantitative
two-and three-dimensional carrier profiling of semiconductor devices with sub-nm spatial …

This work presents the application of scanning spreading resistance microscopy (SSRM) for
the 2D doping profiling of advanced semiconductor devices with high spatial resolution. In …

This work presents the recent progress in SSRM capabilities highlighting simultaneous
performances in terms of sensitivity (< 10%), spatial resolution (1–3nm), dopant gradient …

The performance of nanoelectronic devices critically depends on the distribution of charge
carriers inside such structures. High-vacuum scanning spreading resistance microscopy (HV …

Scanning Spreading Resistance Microscopy (SSRM) is now widely used for two-
dimensional doping profiling with high spatial resolution. The need for a high force between …

The spatial resolution of scanning spreading resistance microscopy (SSRM) has been
investigated experimentally by using dedicated test structures composed of a series of ultra …

The manufacturing of state-of-the-art electronic devices involves an increasing demand for
the accurate determination of ultra-shallow electrical carrier profiles related to the need to …

As emphasized in the International Technological Roadmap for Semiconductors (ITRS), two-
dimensional carrier profiling is one of the key elements in support of technology …