Abstract Scanning Spreading Resistance Microscopy is a well-established technique for
obtaining quantitative two-and three-dimensional carrier profiles in semiconductor devices …

Scanning spreading resistance microscopy (SSRM) is a powerful technique for quantitative
two-and three-dimensional carrier profiling of semiconductor devices with sub-nm spatial …

Scanning spreading resistance microscopy (SSRM) is an analytical technique originally
developed for measuring two-dimensional carrier distribution in Si device structures with …

Scanning spreading resistance microscopy is a two-dimensional carrier profiling technique
now widely used for the characterization of silicon (Si) devices as well as other …

The spatial resolution of scanning spreading resistance microscopy (SSRM) has been
investigated experimentally by using dedicated test structures composed of a series of ultra …

Within this study, the authors have investigated scanning spreading resistance microscopy
(SSRM) measurements on silicon samples under different environmental conditions. The …

Two-dimensional (2D) carrier concentration profiling using scanning spreading resistance
microscopy (SSRM) has been carried out on molecular beam epitaxy-grown GaAs and InP …

The continuous down scaling of the semiconductor devices demands adequate
characterization techniques, able to provide quantitative information with high spatial …

The manufacturing of state-of-the-art electronic devices involves an increasing demand for
the accurate determination of ultra-shallow electrical carrier profiles related to the need to …

Recent developments in scanning spreading resistance microscopy have enabled to move
the technique from the laboratory phase to a commercially available method for 2D-carrier …