The nano-spreading resistance profiling (nano-SRP) method has been developed and
improved such that it can now be used as an accurate tool for quantitative two-dimensional …

Scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy
(SCM) were used to analyze focused ion beam (FIB) induced lateral damage around milled …

The scanning electron microscope (SEM) has gone through a tremendous evolution to
become indispensable for many and diverse scientific and industrial applications. The …

Charge transport at nanoscale in ultra-scaled semiconductor structures and specifically
designed nano-standards is investigated by different scanning probe microscopy (SPM) …

The spreading resistance probe (SRP) is a widely used measurement tool for electrical
characterization of Si structures. From the measured spreading resistance depth profile, the …

The application of the conventional spreading resistance profiling (SRP) method on
ultrashallow profiles is endangered by the phenomenon of pressure enhanced carrier …

Samples prepared using the focused ion beam (FIB) inevitably contain the surface damage
induced by energetic Ga+ ions. An effective method of removing the surface damage is …

In this article we explore the application of scanning capacitance microscopy (SCM) for
studying focused ion beam (FIB) induced damage in silicon. We qualitatively determine the …

Scanning probe microscopy techniques and, in particular, scanning spreading resistance
microscopy (SSRM) were used for a detailed characterization of focused ion beam (FIB) …

Electron channelling patterns (ECPs) formed in back‐scattered images in the scanning
electron microscope (SEM) have been used occasionally to confirm surface amorphization …