Heteroepitaxy of Ge on Si (001) with pits and windows transferred from free-standing porous alumina mask

Y Huangfu, W Zhan, X Hong, X Fang, G Ding… - …, 2013 - iopscience.iop.org
This paper reports the use of ultrathin free-standing porous alumina membrane (PAM) in
pattern transferring for selective epitaxial growth (SEG) of Ge dots and films on Si. PAM, as a …
被引用次数：23 相关文章

[引用][C] Heteroepitaxy of Ge on Si (001) with pits and windows transferred from free-standing porous alumina mask

Y Huangfu, W Zhan, X Hong, X Fang, G Ding, H Ye - Nanotechnology, 2013 - cir.nii.ac.jp

Heteroepitaxy of Ge on Si (001) with pits and windows transferred from free-standing porous alumina mask

Y Huangfu, W Zhan, X Hong, X Fang… - …, 2013 - pubmed.ncbi.nlm.nih.gov
This paper reports the use of ultrathin free-standing porous alumina membrane (PAM) in
pattern transferring for selective epitaxial growth (SEG) of Ge dots and films on Si. PAM, as a …

Heteroepitaxy of Ge on Si (001) with pits and windows transferred from free-standing porous alumina mask.

Y Huangfu, W Zhan, X Hong, X Fang, G Ding… - Nanotechnology, 2013 - europepmc.org
This paper reports the use of ultrathin free-standing porous alumina membrane (PAM) in
pattern transferring for selective epitaxial growth (SEG) of Ge dots and films on Si. PAM, as a …

Heteroepitaxy of Ge on Si (001) with pits and windows transferred from free-standing porous alumina mask

Y Huangfu, W Zhan, X Hong, X Fang, H Ye… - Nanotechnology …, 2013 - inis.iaea.org
[en] This paper reports the use of ultrathin free-standing porous alumina membrane (PAM) in
pattern transferring for selective epitaxial growth (SEG) of Ge dots and films on Si. PAM, as a …

[引用][C] Heteroepitaxy of Ge on Si (001) with pits and windows transferred from free-standing porous alumina mask

Y HUANGFU, W ZHAN, XIA HONG… - Nanotechnology …, 2013 - pascal-francis.inist.fr
Heteroepitaxy of Ge on Si(001) with pits and windows transferred from free-standing porous
alumina mask CNRS Inist Pascal-Francis CNRS Pascal and Francis Bibliographic …

Heteroepitaxy of Ge on Si (001) with pits and windows transferred from free-standing porous alumina mask

Y Huangfu, W Zhan, X Hong, X Fang… - …, 2013 - ui.adsabs.harvard.edu
This paper reports the use of ultrathin free-standing porous alumina membrane (PAM) in
pattern transferring for selective epitaxial growth (SEG) of Ge dots and films on Si. PAM, as a …

Heteroepitaxy of Ge on Si (001) with pits and windows transferred from free-standing porous alumina mask

Y Huangfu, Z Wenbo, H Xia, F Xu, Y Hui, D Guqiao - Nanotechnology (Print …, 2013 - osti.gov
This paper reports the use of ultrathin free-standing porous alumina membrane (PAM) in
pattern transferring for selective epitaxial growth (SEG) of Ge dots and films on Si. PAM, as a …
[PDF] researchgate.net

[PDF][PDF] Heteroepitaxy of Ge on Si (001) with pits and windows transferred from free-standing porous alumina mask

Y Huangfu, W Zhan, X Hong, X Fang, G Ding… - Nanotechnology, 2013 - researchgate.net
This paper reports the use of ultrathin free-standing porous alumina membrane (PAM) in
pattern transferring for selective epitaxial growth (SEG) of Ge dots and films on Si. PAM, as a …
[PDF] researchgate.net

[PDF][PDF] Heteroepitaxy of Ge on Si (001) with pits and windows transferred from free-standing porous alumina mask

Y Huangfu, W Zhan, X Hong, X Fang, G Ding… - Nanotechnology, 2013 - researchgate.net
This paper reports the use of ultrathin free-standing porous alumina membrane (PAM) in
pattern transferring for selective epitaxial growth (SEG) of Ge dots and films on Si. PAM, as a …