A stacked segmented adaptive power amplifier in 22nm FD-SOI
A Banerjee, B Van Liempd… - IEEE Microwave and …, 2022 - ieeexplore.ieee.org
This letter presents a two-stage mm-wave power amplifier (PA) in 22nm fully depleted silicon-
on-insulator (FD-SOI) technology. High output power is obtained through transistor stacking …
on-insulator (FD-SOI) technology. High output power is obtained through transistor stacking …
[引用][C] A Stacked Segmented Adaptive Power Amplifier in 22nm FD-SOI
A Banerjee, B van Liempd, P Wambacq - 2022 - imec-publications.be
This letter presents a two-stage mm-wave power amplifier (PA) in 22nm fully depleted silicon-
on-insulator (FD-SOI) technology. High output power is obtained through transistor stacking …
on-insulator (FD-SOI) technology. High output power is obtained through transistor stacking …
A Stacked Segmented Adaptive Power Amplifier in 22nm FD-SOI
A Banerjee, B van Liempd… - IEEE Microwave and …, 2022 - researchportal.vub.be
This letter presents a two-stage mm-wave power amplifier (PA) in 22nm fully depleted silicon-
on-insulator (FD-SOI) technology. High output power is obtained through transistor stacking …
on-insulator (FD-SOI) technology. High output power is obtained through transistor stacking …
[引用][C] A Stacked Segmented Adaptive Power Amplifier in 22nm FD-SOI
A Banerjee, B van Liempd, P Wambacq - 2022 - imec-publications.be
This letter presents a two-stage mm-wave power amplifier (PA) in 22nm fully depleted silicon-
on-insulator (FD-SOI) technology. High output power is obtained through transistor stacking …
on-insulator (FD-SOI) technology. High output power is obtained through transistor stacking …