GaAs manufacturing processes conditions for micro-and nanoscale devices

F Joint, C Abadie, PB Vigneron, L Boulley… - Journal of Manufacturing …, 2020 - Elsevier
High aspect-ratio etchings are a key aspect of the fabrication of III–V semiconductor devices.
The increasing demand for diverse geometries with various characteristic lengths (from the …
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[PDF] hal.science

[PDF][PDF] GaAs manufacturing processes conditions for micro-and nanoscale devices

F Joint, C Abadie, PB Vigneron, L Boulley… - Journal of …, 2020 - hal.science
High aspect-ratio etchings are a key aspect of the fabrication of III-V semiconductor devices.
The increasing demand for diverse geometries with various characteristic lengths (from the …
[PDF] hal.science

[PDF][PDF] GaAs manufacturing processes conditions for micro-and nanoscale devices

F Joint, C Abadie, PB Vigneron, L Boulley, F Bayle… - 2020 - hal.science
High aspect-ratio etchings are a key aspect of the fabrication of III-V semiconductor devices.
The increasing demand for diverse geometries with various characteristic lengths (from the …