Recent progress of III–V quantum dot infrared photodetectors on silicon

A Ren, L Yuan, H Xu, J Wu, Z Wang - Journal of Materials Chemistry C, 2019 - pubs.rsc.org
Heterogeneous integration of III–V photodetectors on Si substrates offers great advantages
for manufacturing complementary metal-oxide semiconductor (CMOS) compatible photonic …
被引用次数：60 相关文章

Recent progress of III–V quantum dot infrared photodetectors on silicon

A Ren, L Yuan, H Xu, J Wu, Z Wang - Journal of Materials Chemistry C, 2019 - cir.nii.ac.jp
Recent progress of III–V quantum dot infrared photodetectors on silicon | CiNii Research CiNii
国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ移動 論文・データを …
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[PDF][PDF] Recent progress of III–V quantum dot infrared photodetectors on silicon

A Ren, L Yuan, H Xu, J Wu, Z Wang - researchgate.net
Heterogeneous integration of III–V photodetectors on Si substrates offers great advantages
for manufacturing complementary metal-oxide semiconductor (CMOS) compatible photonic …