Incorporation of interstitial carbon during growth of heavily carbon-doped GaAs by movcd and mombe

GE Hoefler, JN Baillargeon, JL Klatt… - Gallium Arsenide and …, 2020 - taylorfrancis.com
Carbon is an attractive dopant for Gallium arsenide-based devices that require high doping
concentrations and low atomic diffusivities. Hole mobilities reported for heavily carbon …
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Incorporation of interstitial carbon during growth of heavily carbon-doped GaAs by MOVCD and MOMBE

GE Hoefler, JN Baillargeon, JL Klatt… - Proceedings of the …, 1991 - experts.illinois.edu
Incorporation of interstitial carbon during growth of heavily carbon-doped GaAs by MOVCD and
MOMBE — University of Illinois Urbana-Champaign Skip to main navigation Skip to search Skip …