Design of a Compact Power Amplifier with 18.6 dBm 60 GHz 20.5% PAE in 22 nm FD-SOI

M Cui, Z Tibenszky, C Carta… - 2020 15th European …, 2021 - ieeexplore.ieee.org
… the design of a 60 GHz power amplifier (PA) in a 22 nm FD-SOI CMOS technology. To … 2.10
A 60GHz 28nm UTBB FD-SOI CMOS reconfigurable power amplifier with 21% PAE, 18.2dBm

A 21-dBm 3.7 W/mm² 28.7% PAE 64-GHz power amplifier in 22-nm FD-SOI

M Cui, C Carta, F Ellinger - IEEE Solid-State Circuits Letters, 2020 - ieeexplore.ieee.org
CMOS power amplifiers (PA) operating at about 60GHz have … in 45nm SOI CMOS,” in 2017
IEEE MTT-S International … A frequency-reconfigurable mmWave power amplifier with active-…

[PDF][PDF] DOCTEUR DE L'UNIVERSITÉ DE BORDEAUX

F TORRES - theses.hal.science
… and reconfigurable power amplifier targeting 5G applications while integrating specific design
techniques and taking advantage of 28nm FD-SOI CMOSPower consumption in 60GHz

An area efficient 48-62 ghz stacked power amplifier in 22nm fd-soi

M Cui, Z Tibenszky, D Fritsche, C Carta… - 2019 14th European …, 2019 - ieeexplore.ieee.org
… output power of 15 dBm and a power added efficiency (PAE) … with over 10 dBm at 60 GHz
in 22 nm FD-SOI technology. The … , “2.10 A 60GHz 28nm UTBB FD-SOI CMOS reconfigurable

A Stacked Segmented Adaptive Power Amplifier in 22nm FD-SOI

A Banerjee, B Van Liempd… - IEEE Microwave and …, 2022 - ieeexplore.ieee.org
… , “2.10 A 60GHz 28nm UTBB FD-SOI CMOS reconfigurable power amplifier with 21% PAE,
18.2dBm … Park, “A 16.3 dBm 14.1% PAE 28-dB gain W-band power amplifier with inductive …

A 28-/60-GHz band-switchable bidirectional amplifier for reconfigurable mm-wave transceivers

AA Nawaz, JD Albrecht… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
… ], we set the target saturated output power on the order of 16–17 dBm and 20% PAE. … “2.10
a 60 GHz 28nm UTBB FD-SOI CMOS reconfigurable power amplifier with 21% PAE, 18.2dBm

A review of technologies and design techniques of millimeter-wave power amplifiers

V Camarchia, R Quaglia, A Piacibello… - IEEE Transactions …, 2020 - ieeexplore.ieee.org
… PA maintains output power in excess of 39 dBm, PAE higher than … parallel power combining
of total 16 sub-PAs at 60 GHz and … CMOS processes, such as FD SOI 28- and 40-nm CMOS, …

Comparison of Millimeter Wave Power Amplifiers with Different Power Combining Techniques

R Bagger, H Sjöland - 2023 - researchsquare.com
power, PSAT of 19.3 dBm and peak PAE of 17.1% for 120 im, and 19.0 … network implementation
[21]. Two-way or higher-order … Kim, ”Highly linear CMOS power amplifier for mm-wave …

Back-gate bias effect on the linearity of pocket doped FDSOI MOSFET

RR Shaik, L Chandrasekar, JP Raskin… - Microelectronics …, 2022 - Elsevier
… be well suited for power amplifiers in which the threshold voltage of power amplifier can be
changed … A 28ghz self-contained power amplifier for 5 g applications in 28 nm fd-soi cmos

Machine learning for automating the design of millimeter-wave baluns

HT Nguyen, AF Peterson - … on Circuits and Systems I: Regular …, 2021 - ieeexplore.ieee.org
… Goren, “A 23-dBm 60-GHz distributed active transformer in a … , “2.10 A 60GHz 28nm UTBB
FD-SOI CMOS reconfigurable … for future array-based backhaul networks in 22nm FD-SOI,” in …