… as the increased incorporation of impurities, such as carbon. A … arsine (AsH3) as the group
V source, and trimethyl gallium (TMGa) was the primary group III precursor for GaAs growth. …

… shallow ionized acceptors, by occupying the Group VA site. … films of GaAs grown using
MOVPE on a GaAs substrate … arsine showed remarkable reduction in carbon incorporation […

… C is not incorporated as a residual acceptor in InP grown by … the InGaAs growth temperature
and the reaction of arsine … cm" possibly due to a high rate of carbon incorporation. On the …

Metalorganic chemical vapor deposition (MOCVD) epitaxial materials technology for the
growth of compound semiconductors has been developed over the past 60-plus years to …

… 3 shows the left of diffraction peak is the GaAs substrate diffraction peak, and the right one is
… both donor and acceptor impurities in the Al x Ga 1-x As, silicon donor and carbon acceptor …

… impact on the growth characteristics, which influence the incorporation behavior. Consequently…
A similar behavior has been seen for the bimolecular decomposition of TMGa and arsine (…

… but compensated by carbon acceptors to yield the measured carrier concentration. … growth
of Sn-doped GaAs present drawbacks such as the incorporation of high density of carbon. …

… and GaAs using the methyl column III precursors and arsine. … effect of growth temperature
on the incorporation of carbon … Its incorporation leads to a compensation of the acceptors in p‐…

… of epitaxial crystal growth using chemical vapor deposition. In … 3 using Li acceptors. The first
reports of epitaxial p-type ZnSe … we showed that the N incorporation could be increased by: 1.…

… and defects may be incorporated unintentionally. Keeping … chloride vapor-phase epitaxy
(ClVPE) [4], hydride vaporphase … MBE) [6], metalorganic chemical vapor deposition (MOCVD) [7] …