Investigating above-bandgap and below-bandgap optical transition in GaBiAs epilayers by photoreflectance spectroscopy

Ö DÖNMEZ, A EROL - Turkish Journal of Physics, 2020 - journals.tubitak.gov.tr
… C) by using photo-modulated reflectance (PR) spectroscopy and photoluminescence (PL). …
the existing defects may be probed by optical techniques such as photoluminescence (PL). …

Charge-Carrier Recombination in Dilute Bismuthide Semiconductors

J Veletas - 2021 - jlupub.ub.uni-giessen.de
… The investigation of the charge-carrier temperatures by means of photoluminescence spec…
Within this work photomodulated re ectance (PR) as well as photomodulated transmittance (…

[HTML][HTML] Carrier dynamics in (Ga, In)(Sb, Bi)/GaSb quantum wells for laser applications in the mid-infrared spectral range

E Rogowicz, J Kopaczek, MP Polak, O Delorme… - Scientific Reports, 2022 - nature.com
… QW absorption edge, indicating the exciton localisation beneath the QW mobility edge. The
carrier dynamics in the QWs probed directly by the time-resolved photoluminescence and …

Propriedades ópticas de filmes semicondutores GaAsBi e GaSbBi

D De Souza - 2022 - repositorio.ufscar.br
… , Raman and low temperature photoluminescence (PL). We … of photon-generated carriers
can be disregarded for laser … doping that modifies carrier occupation at the localized states. As …

Theoretical analyses of the carrier localization effect on the photoluminescence of In-rich InGaAs layer grown on InP

MB Arbia, B Smiri, I Demir, F Saidi, I Altuntas… - Materials Science in …, 2022 - Elsevier
… In this work, the temperature dependent photoluminescence (TDPL) … by Localized State
Ensemble (LSE) model. A comparison between the semi-empirical evolution of luminescence

Enhancement of photoluminescence of GaAsBi quantum wells by parabolic design of AlGaAs barriers

S Pūkienė, M Karaliūnas, A Jasinskas… - …, 2019 - iopscience.iop.org
Probe convergence semi-angle was set to 9.3 mrad, allowing to achieve ∼2.0 Å spatial … by
photomodulated transmittance and PL techniques of strong carrier localization phenomena in …

Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment

R Kudrawiec, J Kopaczek, O Delorme… - Journal of Applied …, 2019 - pubs.aip.org
photoluminescence spectra in order to confirm the type-I character of the studied QWs and
show very weak carrier localization … μm was used as the probe and a continuous wave laser (…

Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1− xBix layers grown by Molecular Beam Epitaxy

S Alhassan, D de Souza, A Alhassni, A Almunyif… - Journal of Alloys and …, 2021 - Elsevier
… The photoluminescence (PL) and Raman spectra have … can overcome the lower barriers,
and the transmission … optical properties of n-type GaBiAs layers grown under similar conditions …

Structural and optical properties of n-type and p-type GaAs (1− x) Bi x thin films grown by molecular beam epitaxy on (311) B GaAs substrates

D De Souza, S Alhassan, S Alotaibi… - Semiconductor …, 2021 - iopscience.iop.org
… temperature, and photoluminescence measurements as a … of photon-generated carriers
can be disregarded for laser … doping that modifies carrier occupation at the localized states. As …

[HTML][HTML] Effect of MBE growth conditions on GaAsBi photoluminescence lineshape and localised state filling

NJ Bailey, TBO Rockett, S Flores, DF Reyes… - Scientific reports, 2022 - nature.com
… thoroughly probed by low-temperature, power-dependent … also used a two-scale approach
in a carrier hopping model to … performed in scanning transmission electron microscope mode (…