… A variety of physical, chemical, and electrochemical etching … Porous GaAs produced by the
chemical etching process is … were to fabricate nanoporous GaAs using chemical method and …

… be initiated by the electrochemical etching method with simultaneous … formation on the
surface of the monocrystalline GaAs porous layer and As 2 O 3 crystallites in the electrochemical …

… Self-organized nanoporous structures with hexagonal … articles regarding electrochemical
etching to fabricate p-type … chemical etching of GaAs using electronic hole and thermally driven …

… At an etching time of 60 min, the porous GaAs layer formed on p + -type GaAs substrate
shows a … state on macroporous–nanoporous silicon films processed by electrochemical …

… Self-organized nanoporous structures with hexagonal … in this compound via electrochemical
etching techniques. … Crysto pores are inherent to Si, GaP, InP and GaAs, however no …

… , gallium nitride (GaN), and gallium arsenide (GaAs) have been employed for optoelectronic
… this work, the formation of porous n-type Si(111) and porous p-type GaN via ACPEC etching …

… GaAs formed on p-type GaAs substrate using similar etching … formation and the nature of
oxides in the electrochemically … -like nano-porous structure, whereas, the one formed on the …

… by a reduced lateral etch rate in n-type GaAs and an oxidant … in higher etch rates, and p-type
samples were found to etch at … nanowires instead of nanopores formed during Ag catalyzed …

… nanoporous (NP)/GaN-based DBR by electrochemical … layers to be grown on GaAs
substrates. Meanwhile, the AlGaAs DBR structure can also be used as a current path for p-type or n-…

… to the formation of nanowires that lengthen as the “nanoporous silver … However, it has been
shown (with p-type silicon) that … Compared to electrochemical etching, we found that a higher …