… of InP nanowires containing ap–n junction using scanning … from our KPFM image is that the
depletion region and dopant … across ap–n junction under each bias condition is illustrated by …

… Secondary electron and electron beam-induced current images obtained using scanning …
electrons (holes) depleting n-type (p-type) segments. This depletion region in our case might …

… /InP junction at 5 K for zero bias. … depletion of free holes in the InP side of the heterojunction
leads to the formation a space charge region, which can be modeled by a tunneling junction. …

… and 0.9 ± 0.1 V, and depletion region widths as narrow as 13 ± 1 … induced current images
obtained using scanning electron … beam-induced current biasing and poor grounding contacts. …

… can be mapped directly and compared to high resolution images. … and welded to the electrical
biasing chip. The specimen is … the edge of the depletion region, which is best seen using a …

… through in situ biased four-dimensional scanning transmission electron microscopy (4D-STEM).
Measurements of electric field, built-in voltage, depletion region width, … pixelated direct …

… scanning electron microscope image of the bare InP … overall low leakage current under
reverse bias also indicates the … a trade-off between depletion region width and device speed. As …

… P 2 -source diffusion process and the guard rings were directly characterized by the scanning
… the electric field in the multiplication region under small bias and it can make the electric …

… A scanning electron microscope (SEM) image of an … is a result of the depletion region
extending the entire length of … measured at a reverse bias of −10 V under pulsed excitation at 76 …

… An excellent candidate is InP due to its narrow and direct band … A diode is said to be reverse
biased when the n-side is … in the depletion region, the built-in field of the depletion region …