… Local vibrational modes in heavily carbon doped GaSb have been reported by Chen et al.
[… The difference between the optical and electrical mobilities determined from this study is …

… Hole mobilities reported for heavily carbon-doped samples, moreover, are at least 30% … The
authors have directly measured the presence of interstitial carbon in carbon-doped epilayers …

… degree of interaction between the resulting GaSb layer and the substrate was … GaSb
transferred onto a Si substrate, and the parameters of the obtained samples are given (Si and GaSb …

… Here, we demonstrate 128 Mb carbon-doped GST (CGST) PCM chips with excellent thermal
stability, reduced reset current (0.6 mA), and longer cycle lifetimes (>10 8 cycles). For the …

… Optical properties of Sn-catalyzed ultrahigh hole mobility … In this work, the photoelectronic
properties of the as-prepared Sn-catalyzed GaSb NWs were systematically investigated by …

… nonlinear optical properties of the GaSb film. Thus, the comprehensive performance and
potential of GaSb as a new SA are exceptional, and we look forward to its further development. …

… /GaSb type-II … optical response in InAs/AlSb/GaSb type-II superlattices by adjusting the
AlSb material thickness has been presented [30]. Optical properties of N structure InAs/AlSb/GaSb …

… In this work, we have achieved carbon-doped p-InAlAs epitaxial layers with adjustable doping
concentrations by tailoring the growth parameters through a metalorganic chemical vapor …

… optical parameters such as optical electronegativity, surface and volume energy loss functions,
optical and electrical … in the SILAR method on the nonlinear optical properties of Fe 2 O 3 …

… as an acceptor in GaAs, GaP, GaSb and AlAs. However, in the … as 400 C from the LVMs study
of carbon-doped InAs [11]. After … change of the electrical and optical property is attributed to …