… TiN hardmask stress on wiggling was explored via etching of p-SiOCH with a 28 nm pitch,
L/S EUV resist pattern. In TFMHM, the TiN mask is exposed to plasma during the p-SiOCH etch…

… the etching. In this study, etch characteristics of nanoscale TiN masked porous SiCOH such
as … deposited by PECVD was used as the hard mask of porous SiCOH etching for good …

… wave plasma etching. Porous SiCOH dielectric with a patterned TiN hard mask was etched
using the RF pulsed plasmas and the results showed more anisotropic etching profiles with …

… dielectric patterned with a TiN hard mask was etched using the RF pulsed plasmas and the
results showed more anisotropic etching … ) was used and the etching properties such as etch …

… Perspective on the Future of Dielectrics Research for Nanoelectronic Devices - IOPscience
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… dielectrics, high-k dielectrics like HfO 2 or ZrO 2 can hardly be … Hard masks for the reactive
ion etching of TiN for capacitor … Reactive ion etching was used to etch the top TiN electrode …

… material of the metal lines (SiN in our case) and the dielectric … We have used a SiN hard
mask with TiN as an adhesion … in the hard mask width, while the Ru layer is not yet fully etched. …

… process, TG was used as a mask for dry etching to define the size of the gate insulator layer
and OSC. After process … for hopping conduction distance properties of the Sn: SiOX thin film …

… process flow of Metal 1 (M1) using TiN as a hard mask in BEOL. To guarantee the formation
of the critical features, a typical etch … ) is a hard mask material for etching SiO2 used in Front …

… is the requirement of a metal hard mask for etching. The … Our etch requires no metal mask
and thus no post-process … for ITO, we started with fluorine chemistry as for other dielectrics, …