… performs resistive switching behavior with inherent memory … The cation migration based
memristive devices are generally … phase formed in the Pt/WO 3−x /Pt devices in the forming …

… used in valence change memory devices for the formation and … A cation migration-based
RRAM cell generally consists of a … We would like to take a typical metal oxide-based RRAM as …

… NVMs, a resistive switching device for resistive random access memory (RRAM) has a high
… As will be discussed further in Figure 5 for the switching mechanism, the stable transient …

… cation migration-based RRAM, so this kind of RRAM also called electrochemical metallization
(ECM) memories [4… for the resistance change of this kind of RRAM is that the formation and …

… of NVM, resistive random access memory (RRAM) device … in the RRAM device and the
resulting formation process of CFs … comparison among RRAM devices with different oxide layers…

… performance can be improved by changing the BE from Pt to indium tin oxide (ITO). The …
switching mechanisms. We propose that the RS characteristics arise from either the formation of …

… the forming, RESET and SET voltages and in the resistance … which consist in the oxidation
and reduction of atoms from the … , most of the physical mechanisms involved are included and …

… Chen, “Area and thickness scaling of forming voltage of resistive switching memories,” IEEE
… Aono, “Forming and switching mechanisms of a cation-migration-based oxide resistive mem…

… , cation migration-based conductive bridge random access memory (CBRAM) has received
… can be explained with metallic conductive filament formation and rapture due to oxidation …

… We propose a mechanism for the experimentally observed decrease in … Aono, “Forming and
switching mechanisms of a cation-migration-based oxide resistive memory,” Nanotechnology…