Tailoring strain and lattice relaxation characteristics in InGaAs/GaAsP multiple quantum wells structure with phosphorus doping engineering

C Hou, Y Zou, H Wang, X Wang, Y Xu, Q Wang… - Journal of Alloys and …, 2019 - Elsevier
… leaded to the increase of roughness of heterogeneous interface; secondly, according to
PL test result, the indium separation and phosphorus diffusion to form InGaAsP. The lattice …

InP/InGaAsP thin films based solar cells: Lattice mismatch impact on efficiency

A Tarbi, T Chtouki, A Bouich, Y Elkouari, H Erguig… - Optical Materials, 2022 - Elsevier
… This simulator was developed to simulate the characteristics … Output parameters such as JV
characteristics in the dark and … on the InGaAsP quaternary adapted to the InP substrate and …

Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates

S Soresi, M da Lisca, C Besancon, N Vaissiere… - EPJ …, 2023 - epjpv.epj.org
… study for the realization of an InP/InGaAs tandem solar cell lattice-matched to InP on a
commercially available Si template by direct MOVPE growth. The InP top cell and the InGaAs …

Numerical Analysis of Lattice-matched InAlAs/InGaAsP/InGaAs based Triple-junction Solar Cell using MATLAB/Simulink

S Roy, MJ Hossain - 2020 IEEE Region 10 Symposium …, 2020 - ieeexplore.ieee.org
… An InGaAs/InP dual junction solar cell exhibits 31.8% efficiency … cell lattice matched to InP
lattice constant has been pronounced [9]. Although there’re several experimental works on InP

A Study on the Growth Conditions Role in Defining InGaAs Epitaxial Layer Quality

M Demir, S Elagöz - Cumhuriyet Science Journal, 2024 - csj.cumhuriyet.edu.tr
growth and characterization of InxGa1-xAs layers on InP substrate, a critical area in the
development … xAs's utility lies in its lattice-matched structure with Indium Phosphide (InP), which …

Inverted metamorphic InGaAsP/InGaAs dual-junction solar cells towards full solar spectrum harvesting

S Park, MR McCartney, DJ Smith, J Jeon… - Journal of Materials …, 2022 - pubs.rsc.org
… the fabrication and analysis of a metamorphic InGaAsP/InGaAs … An InGaAsP subcell with a
2.5 μm-thick p-In 0.81 Ga 0.19 As 0.42 P 0.58 base layer was grown lattice-matched to the InP

Selective-Area Epitaxy of InGaAsP Buffer Multilayer for In-Plane InAs Nanowire Integration

V Zannier, A Li, F Rossi, S Yadav, K Petersson, L Sorba - Materials, 2022 - mdpi.com
growth of GaP/InGaP/InP/InAsP buffer layer nanotemplates on GaP substrates which are
closely lattice-matched to … microscopy (SEM) analysis was performed after each growth step in a …

Transport properties of the deformed quaternary InGaAsP epitaxied on different substrates

A Tarbi, T Chtouki, A Benahmed, Y Elkouari, H Erguig… - Optik, 2022 - Elsevier
InGaAsP/GaAs and InGaAsP/ZnSe alloys are characterized by compression deformation. In
the case of the InP … Energy band gaps for the Ga x In 1− x As y P 1− y alloys lattice matched

Development of strain compensated InGaAs/InGaP multiple quantum wells in the 1.05–1.50 eV energy range for multijunction solar cells

EW Costa, DN Micha, RMS Kawabata, LD Pinto… - Micro and …, 2023 - Elsevier
… in SC, such as lattice matched GaAs/AlGaAs, GaAs/InGaP, InGaAs/InP and InGaAsP/InGaP
[3,19,… Hereafter, these two samples will be compared in our analysis because they have very …

Growth of InGaAs Solar Cells on InP (001) Miscut Substrates Using Solid‐Source Molecular Beam Epitaxy

R Oshima, Y Ishitsuka, Y Okano… - physica status solidi …, 2020 - Wiley Online Library
… solar cells (DJSCs), lattice-matched to GaAs, combined with InGaAsP/InGaAs DJSCs, …
, we have characterized the performance of lattice-matched InGaAs solar cells grown on InP