Two-section passively Mode-locked laser as a test for amplification and absorption parameters of a quantum well based InP optical amplifier at 1300 nm

J Hazan, S Tondini, A Nassar… - IEEE Journal of …, 2024 - ieeexplore.ieee.org
… in the travelling wave simulator to predict the behavior of the laser … where 𝜒 is the material
susceptivity, 𝛾 the homogeneous linewidth… 3μm InGaAsP / InP semiconductor optical amplifier

Multi-gain interferometric laser for intra-cavity beam combining

S Piccione - 2020 - iris.unitn.it
… , diode lasers are starting to be used as Direct Diode Laser (… 2For InGaAsP alloys,
semiconductor material used in our … The last equality holds only for homogeneous system, where …

[图书][B] Mode-Locked Lasers: Introduction to Ultrafast Semiconductor and Fiber Lasers

NK Dutta - 2024 - books.google.com
… of rare-earthdoped lasers and amplifiers could be produced for … is grown by cooling a saturated
solution of the composition of the … of a semiconductor laser fabricated using InGaAsP/InP …

Large linewidth reduction in semiconductor lasers based on atom-like gain material

T Septon, A Becker, S Gosh, G Shtendel, V Sichkovskyi… - Optica, 2019 - opg.optica.org
… [30] suggests a homogeneous linewidth for the clamped … below threshold and an optical
amplifier made of the same material… The rollover in the simulation is due to gain saturation effects…

[PDF][PDF] Integrated widely tunable laser systems at 1300 and 1550 nm as swept sources for optical coherence tomography

J Hazan - 2023 - research.tue.nl
diode lasers (>2 W for broad area devices) and amplifiers … The platform discussed in this
thesis is based on the InGaAsP/InP … results of a time domain travelling wave simulator using the …

[HTML][HTML] Edge emitting mode-locked quantum dot lasers

A Yadav, NB Chichkov, EA Avrutin… - Progress in Quantum …, 2023 - Elsevier
… and their uses in lasers, amplifiers, and saturable absorbers. … Semiconductor laser diodes
have been of interest for … in narrow-band laser emission, limited by homogeneous broadening. …

[PDF][PDF] MULTIWAVELENGTH FIBER LASER BASED ON DIFFERENT TYPES OF SEMICONDUCTOR OPTICAL AMPLIFIERS

ONGY SUAN - 2020 - eprints.utm.my
travelling wave (TW) SOA with parameters such as optical … subject due to high saturation
power and low polarization … limited number of laser lines due to its homogeneous property. The …

Efficiency-boosted semiconductor optical amplifiers via mode-division multiplexing

Y Wang, Y Wei, V Dolores-Calzadilla, D Dai, K Williams… - Optica, 2023 - opg.optica.org
… For an SOA before saturation, the same electrical power is … carriers are utilized in a more
homogeneous way. Resonance is … The core is made of InGaAsP with a bandgap corresponding …

Photonic integrated circuits on InP for high power signals generation in the millimeter wave range

A Jankowski - 2019 - theses.hal.science
The analog or digital signal transmissions at millimeter wave frequencies play a key role in
many industrial and research areas such as telecommunication, spectroscopy and IT. They …

[HTML][HTML] Spectral Output of Homogeneously Broadened Semiconductor Lasers

DT Cassidy - Photonics, 2021 - mdpi.com
… on 1.5 μ m InGaAsP travelling-wave semiconductor amplifiers [… one wavelength and measured
the gain on a weak probe as a … gain saturated homogeneously—that is, the gain saturated