Study of Strained-SiGe Channel P-MOSFET Using Silvaco TCAD: Impact of Channel Thickness
SNFN Mohd Salleh, AF Abd Rahim… - Key Engineering …, 2023 - Trans Tech Publ
… and 45 nm technology nodes because the conductivity mass of … as Si, but its lattice constant
is larger by 4.2% for pure Ge [6]. … Starting with the 90 nm CMOS technology node, embedded …
is larger by 4.2% for pure Ge [6]. … Starting with the 90 nm CMOS technology node, embedded …
Study of Strained-SiGe Channel P-MOSFET Using Silvaco TCAD: Impact of Channel Thickness
SNFNM Salleh, AF Abd Rahim, NSM Razali… - Engineering Materials …, 2023 - torrossa.com
… and 45 nm technology nodes because the conductivity mass of … as Si, but its lattice constant
is larger by 4.2% for pure Ge [6]. … Starting with the 90 nm CMOS technology node, embedded …
is larger by 4.2% for pure Ge [6]. … Starting with the 90 nm CMOS technology node, embedded …
[引用][C] SOI P TFET
… Hot Carrier Reliability in 45 nm Strained Si/relaxed Si1 xGex CMOS Based SRAM Cell …
DC and RF Performance Optimization of Strained Si/Si1xGex Heterojunction SOI PTFET …
DC and RF Performance Optimization of Strained Si/Si1xGex Heterojunction SOI PTFET …