… Since the development of molecular-beam epitaxy, as well as other crystal growth … This
review summarizes the developments in different approaches and crystal growth techniques, …

… growth of single-crystalline InP patterns at substrate temperatures down to 220 C by first
activating the precursor, thus enabling the direct growth of InP … characteristics of an InP transistor …

… As we suppressed the inhomogeneity of InP crystals, our pure tetrapods may benefit
optoelectronic characteristics, distinct from previously prevalent mixed-crystalline II–VI tetrapod NCs …

… The HR-TEM analysis also discloses the presence of InP QDs with approximate sizes between
6 and 9 nm and interplanar distances of 2.9 and 2.6 Å, characteristic of the (2 1 1) and (2 …

… (InP) –1 , which indicates a 3D island growth behavior of the InP crystals and the formation
of bulk crystals … , confirming the ultra-thin characteristic of the InP crystal grown on the AuIn 2 …

… We have investigated the growth and characterization of InAs/InP 0.69 Sb 0.31 superlattice
on InAs substrate by MOCVD. The SL has excellent material qualities with a surface …

… produced a remarkable quantity of high-quality InP nanowires on Si/SiO2 substrates using
… amount of InP nanopillars on polycrystalline InP substrates using the in-situ growth method. …

Semiconductors made with earth abundant elements are promising as absorbers in future
large-scale deployment of photovoltaic technology. This paper reports on the epitaxial …

… InP epilayers with different InP nucleation layer thicknesses on Si(001) substrates by using
a gas-source MBE (GSMBE) system, and the two-step growth … and AFM analysis all illustrate …

… InP quantum dots (QDs) are synthesized with a green methodology. The preparation of the
InP … and to develop the targeted InP QDs, which are characterized using HRTEM, XRD, PL, …