… Terahertz detectors using InP HEMT could thus far achieve a response time of less than 30
ps [11], noise equivalent power … have been using cryogenically cooled low noise amplifier for …

… Traditionally, THz sources use diode-based … power amplifier based on 70 nm InP HEMT
technology with Tandem-X couplers is presented. Compared to single-branch amplifiers, the …

… THz monolithic integrated circuit (TMIC) amplifiers using … use this technology to design two
power amplifiers at 500 GHz. We describe the amplifier technology and two different amplifier …

Two high-gain, broadband power amplifier MMICs are reported. The first result is a 140-GHz
0.25-W PA. It utilizes 5-gain stages and 4-way power combining. S 21 gain is 29.4-dB. It …

… HEMTs, InP and SiGe HBTs, and Si MOS demonstrated an efficient detection of terahertz
(THz) … Figure 8 shows the typical power levels achieved by the existing THz electronic sources. …

… of power gain for the amplifier under subterahertz frequency. … transistor (mHEMT), InP
HEMT and InP HBT are the possible … superior on-state resistance of 0.65ohm-mm and higher …

… design of GaN HEMT-based broadband THz detectors. His research interests include power
amplifiers, broadband antennas, GaN HEMTs for special applications, MMIC design, and …

… an active device can provide power amplification is quantified using the maximum oscillation
… nm InP high electron mobility transistor (HEMT) delivers f max of 1.5 THz and f T of 0.61 THz…

… Reported output power of III–V HEMT-based solid-state power amplifiers lies at around
17 … chip sets dedicated to THz communication on the basis of InP HEMT or GaAs mHEMT …

… , THz waves have photon energy as low as thermal energy at room temperature and high
resolution required for imaging. Thus, imaging with THz … as InGaAs and InP were removed by …