… barrier height, and on the deposition and post-deposition treatment … the structural evolution
of Ni-based Schottky contacts on β-… at 550 C for 30 s for ohmic contact formation. To form …

… properties of Ni-based back-side Ohmic contacts formed by laser … integrated in the fabrication
of 650V SiC Schottky diodes. … 1a,b), a high temperature RTA process (900–1000 C) is …

… be applied to fabricate the ideal 4H–SiC Schottky diodes. … SBI at low temperatures (400
C–500 C), while the formation of both … The backside Ohmic contact was formed by Ni–W bilayer …

… These two factors are influenced by processing technology. (… as Schottky barrier diode and
junction barrier Schottky diode [… At present, many studies on laser-annealed Ni-based ohmic …

… annealing enables control of the processing region, temperature, and duration. … temperature
field generated via laser annealing was simulated numerically for various Ni-based ohmic …

… The Schottky diodes were fabricated on the 650 μm-thick Sn-… by E-beam evaporation as
the ohmic contacts. For the … Ni-based devices were not observed for the post-treatment. The …

… a Schottky diode containing a metal–semiconductor Schottky … using Ni, and a triple layer of
Ti/Pt/Au was used for the ohmic … processing play a crucial role in the performance of the SiC …

… nm) layer was deposited for forming ohmic contacts to n-GaN. … The temperature dependence
of GaN Schottky diodes was … 2 –V plots of the Ni-based Schottky diodes with and without …

… If ohmic character was seen for lower temperatures, we did not increase the annealing … the
arguably best Ni-based contact resistivity that could be achieved for p-GaN. We will treat it as …

… Babanin, MA Yagovkina, and IP Nikitina, “The influence of temperature treatment on the
formation of Ni-based Schottky diodes and ohmic contacts to n-6H-SiC,” Mater. Sci. Eng., B, vol. …