… of fundamental concepts to the industry for development and technological applications. …
In conclusion, a GaInAsP/InP membrane structure was bonded on a Si substrate via a-Si …

… , it is GaInAsP solid solutions lattice-matched to InP that … use of a system of GaInAsP solid
solutions obtained on an InP … The GaInAsP and InP materials investigated in this study have …

… The additional GaInAsP … applications, it serves nevertheless to establish the special atom-like
nature of the QD gain material, which is responsible, in turn, for the high-quality, application…

… InP; hence the design of the thickness of the low InP cladding layer is important. In this paper,
the GaInAsP laser diode on the directly bonded InP… -wavelength applications. Similarly, the …

… of devices of quantum electronics. InGaAsP solid solutions are widely used for the production
of devices … The main area of application of these devices is systems for transmitting optical …

… AIX200 apparatus for MOCVD on InP(100) : S and InP(100) : … growth of InP layers and X
TEGa = 2 μmol/min, X TMIn = 18 … from the interface with the InP buffer layer to the surface of the …

… onto on InP-SiO 2 /Si (InPoSi) wafer and compared to the same structure grown on InP wafer
… difference of coefficient of thermal expansion between InP and Si, was assessed at growth …

… 15, two InP-based active devices were integrated on Si … , and then a 2 inch InP wafer with a
GaInAsP MQW for the laser … with possible application to various active devices. Furthermore, …

… suitable for wide application in engineering [7-9]. … of chips for quantum electronics devices.
Creating chips from the … for the creation of an InP/GaInAsP two-channel laser heterostructure …

… of the quantum well within the InP/GaInAsP material system will determine the recombination
energy. The HELLISH structure is primarily a longitudinal transport device, hence in the …