This paper presents a compact transformer-based linear and efficient power amplifier (PA) in
0.13-μm SiGe: C BiCMOS for 5G applications. To reduce the form factor, an ultra-compact …

This paper presents a high efficiency linear stacked FET power amplifier (PA) IC for 5G
wireless communication systems. An adaptive bias circuit is used to enhance linearity and …

In this work, a D-band power amplifier with 7 dBm output at 0.14 THz is presented in a 0.13
μm SiGe: C BiCMOS technology. The f_t and f_max of this technology are 250GHz and …

A high efficiency linear power amplifier (PA) IC is presented for 14 GHz-band wireless
communication systems. A novel adaptive bias circuit with four-stacked MOSFET structure is …

Continued demand for 5G cellular connectivity in mobile handheld devices, where antenna
real-estate is at a premium, necessitates high output power from individual transmitter …

This paper presents a 4-way combined G-band power amplifier (PA) fabricated with a 130-
nm SiGe BiCMOS process. First, a single-ended PA based on the cascode topology (CT) is …

In this letter, a wideband power amplifier (PA) and a frequency source (FS) at 240 GHz are
presented in 130-nm BiCMOS technology with f T/f max= 300/500 GHz. Two circuits are …

A broadband 3-stage pseudo-differential SiGe power amplifier, fabricated in an
experimental 130 nm SiGe BiC-MOS technology with ft/f max of 470/650 GHz, is presented …

In order to efficiently utilize the frequency band above 200GHz for radar and communication
applications, enough transmitted output power is essential to overcome the elevated path …

Lately, sub-THz bands are drawing attention for high data-rate communications where the H-
band (220-325GHz) is a strong candidate for the next generation (6G) wireless …