Despite its extraordinary charge carrier mobility, the lack of an electronic bandgap in
graphene limits its utilization in electronic devices. To overcome this issue, researchers have …

Epitaxially oriented wafer-scale graphene grown directly on semiconducting Ge substrates
is of high interest for both fundamental science and electronic device applications. To date …

Combining scanning tunneling microscopy and angle-resolved photoemission
spectroscopy, we demonstrate how to tune the doping of epitaxial graphene from p to n by …

Graphene quality indicators obtained by Raman spectroscopy have been correlated to the
structural changes of the graphene/germanium interface as a function of in-vacuum thermal …

The direct growth of graphene on a semiconducting substrate opens a new avenue for future
graphene-based applications. Understanding the structural and electronic properties of the …

Graphene grown directly on Ge via chemical vapor deposition (CVD) can passivate the
underlying Ge surface, preventing its oxidation in ambient air for at least months. However …

Incorporating heteroatoms into the graphene lattice may be used to tailor its electronic,
mechanical and chemical properties, although directly observed substitutions have thus far …

Stacking two-dimensional materials in so-called van der Waals (vdW) heterostructures, like
the combination of GaSe and graphene, provides the ability to obtain hybrid systems that are …

We report on tuning interfacial properties of epitaxially-grown graphenes with different kinds
of metal substrates based on scanning tunneling microscopy experiments and density …

Constructing vertical heterostructures by placing graphene (Gr) on two-dimensional
materials has recently emerged as an effective way to enhance the performance of …