Epitaxially oriented wafer-scale graphene grown directly on semiconducting Ge substrates is of high interest for both fundamental science and electronic device applications. To date …
Combining scanning tunneling microscopy and angle-resolved photoemission spectroscopy, we demonstrate how to tune the doping of epitaxial graphene from p to n by …
Graphene quality indicators obtained by Raman spectroscopy have been correlated to the structural changes of the graphene/germanium interface as a function of in-vacuum thermal …
The direct growth of graphene on a semiconducting substrate opens a new avenue for future graphene-based applications. Understanding the structural and electronic properties of the …
Graphene grown directly on Ge via chemical vapor deposition (CVD) can passivate the underlying Ge surface, preventing its oxidation in ambient air for at least months. However …
Incorporating heteroatoms into the graphene lattice may be used to tailor its electronic, mechanical and chemical properties, although directly observed substitutions have thus far …
Stacking two-dimensional materials in so-called van der Waals (vdW) heterostructures, like the combination of GaSe and graphene, provides the ability to obtain hybrid systems that are …
We report on tuning interfacial properties of epitaxially-grown graphenes with different kinds of metal substrates based on scanning tunneling microscopy experiments and density …
Constructing vertical heterostructures by placing graphene (Gr) on two-dimensional materials has recently emerged as an effective way to enhance the performance of …