We explore a number of different electrochemical, wet chemical, and gas phase approaches
to study intercalation and oxidation at the buried graphene-Ge interface. While the previous …

The oxidation of Ge covered with graphene that is either grown on or transferred to the
surface is investigated by X-ray photoelectron spectroscopy, Raman spectroscopy, and …

Graphene grown directly on Ge via chemical vapor deposition (CVD) can passivate the
underlying Ge surface, preventing its oxidation in ambient air for at least months. However …

The oxidation behavior of Ge (001) and Ge (110) surfaces underneath the chemical vapor
deposition (CVD)-grown graphene films has been investigated experimentally and …

Epitaxially oriented wafer-scale graphene grown directly on semiconducting Ge substrates
is of high interest for both fundamental science and electronic device applications. To date …

Graphene quality indicators obtained by Raman spectroscopy have been correlated to the
structural changes of the graphene/germanium interface as a function of in-vacuum thermal …

The physical and chemical state of the underlying germanium (Ge) substrate is crucial for
the CVD synthesis of high-quality graphene. Here, we investigate the main causes …

Despite its extraordinary charge carrier mobility, the lack of an electronic bandgap in
graphene limits its utilization in electronic devices. To overcome this issue, researchers have …

Incorporating heteroatoms into the graphene lattice may be used to tailor its electronic,
mechanical and chemical properties, although directly observed substitutions have thus far …

By combining scanning probe microscopy with Raman and x-ray photoelectron
spectroscopies, we investigate the evolution of CVD-grown graphene/Ge (001) as a function …