The oxidation of Ge covered with graphene that is either grown on or transferred to the surface is investigated by X-ray photoelectron spectroscopy, Raman spectroscopy, and …
Graphene grown directly on Ge via chemical vapor deposition (CVD) can passivate the underlying Ge surface, preventing its oxidation in ambient air for at least months. However …
F Akhtar, J Dabrowski, M Lisker… - … applied materials & …, 2020 - ACS Publications
The oxidation behavior of Ge (001) and Ge (110) surfaces underneath the chemical vapor deposition (CVD)-grown graphene films has been investigated experimentally and …
Epitaxially oriented wafer-scale graphene grown directly on semiconducting Ge substrates is of high interest for both fundamental science and electronic device applications. To date …
Graphene quality indicators obtained by Raman spectroscopy have been correlated to the structural changes of the graphene/germanium interface as a function of in-vacuum thermal …
The physical and chemical state of the underlying germanium (Ge) substrate is crucial for the CVD synthesis of high-quality graphene. Here, we investigate the main causes …
Despite its extraordinary charge carrier mobility, the lack of an electronic bandgap in graphene limits its utilization in electronic devices. To overcome this issue, researchers have …
Incorporating heteroatoms into the graphene lattice may be used to tailor its electronic, mechanical and chemical properties, although directly observed substitutions have thus far …
By combining scanning probe microscopy with Raman and x-ray photoelectron spectroscopies, we investigate the evolution of CVD-grown graphene/Ge (001) as a function …