A dry etching process to transfer the pattern of a photonic integrated circuit design for high-
speed laser communications is described. The laser stack under consideration is a 3.2-µm …

The authors report the fabrication and characterization of In Ga As P∕ In P rectangular ring
laser photonic integration circuits based on active vertical-coupler structure by cascade …

We present inductively-coupled-plasma, reactive-ion-etching (ICP-RIE) techniques with 2
orders of magnitude difference in etch rates, for the Al_xGa_1-xAs material system. These …

AlGaAs photonic integrated circuits fabricated using chemically assisted ion beam etching
clickable element to expand a topic LOGIN OR CREATE ACCOUNT PRISM SUBMISSION This …

We obtained high-performance InGaAsP/InP buried heterostructure lasers integrated with
butt-coupled waveguides using reactive ion etching (RIE) for mesa definition, brief chemical …

This paper presents fabrication and characterization of ridge waveguide
InGaAs/InGaAsP/InP lasers with an operating wavelength of 1.5 m using reactive ion etching …

Two InP‐based III–V semiconductor etching recipes are presented for fabrication of on‐chip
laser photonic devices. Using inductively coupled plasma system with a methane free gas …

In this paper we report the optimization of an ICP dry etching process for the fabrication of
submicron-sized features in a range of InP-based materials. High-resolution, deep (> 3.0 …

Recent progress in dry etching technologies enabled realizations of ultra-fine-structures with
superior verticality with a high aspect ratio. We applied a reactive-ion-etching (RIE) using a …

This study demonstrates etch profile engineering of InP, In 1− x Ga x As 1− y P y, and In 0.53
Ga 0.47 As heterostructures results from adding H 2 to standard Cl 2/Ar inductively coupled …