Two InP‐based III–V semiconductor etching recipes are presented for fabrication of on‐chip
laser photonic devices. Using inductively coupled plasma system with a methane free gas …

The authors report the fabrication and characterization of In Ga As P∕ In P rectangular ring
laser photonic integration circuits based on active vertical-coupler structure by cascade …

Ion beam (IBE), chemically assisted ion beam (CAIBE) and reactive ion (RIE) etching of InP
are reported comparatively. Fabrication and characterisation of InP-based semiconductor …

A simple deposition and etch‐back technique to form narrow (∼ 300 Å) masks for
subsequent pattern transfer into semiconductors is reported. High ion density (∼ 5× 1011 …

We examine methane–hydrogen–argon-based deep dry etching of InP for facet-quality
sidewalls by reactive ion etching. A process is developed for etch depths as high as 5.8 μm …

Integrating optically active III-V materials on silicon/insulator platforms is one potential path
towards improving the energy efficiency and performance of modern computing. Here we …

This study demonstrates etch profile engineering of InP, In 1− x Ga x As 1− y P y, and In 0.53
Ga 0.47 As heterostructures results from adding H 2 to standard Cl 2/Ar inductively coupled …

Double-slot photonic crystal waveguide (PCW) in InP heterostructure is fabricated by
inductively coupled plasma (ICP) etching. Due to using an ultra-low pressure of 0.05 Pa …

In this paper we report the optimization of an ICP dry etching process for the fabrication of
submicron-sized features in a range of InP-based materials. High-resolution, deep (> 3.0 …

Pure HBr based inductively coupled plasma vertical, anisotropic etching provides high
aspect ratio (20–40) nanoscale trenches in InP at 165 C processing temperatures. Since …