A 239–298 GHz power amplifier in an advanced 130 nm SiGe BiCMOS technology for communications applications
A broadband 3-stage pseudo-differential SiGe power amplifier, fabricated in an
experimental 130 nm SiGe BiC-MOS technology with ft/f max of 470/650 GHz, is presented …
experimental 130 nm SiGe BiC-MOS technology with ft/f max of 470/650 GHz, is presented …
60-GHz SiGe-BiCMOS power amplifier with 14.7 dBm output power and 18 dB power gain
In this paper, a power amplifier (PA) operating in the 60 GHz ISM band is presented. A
single-stage cascode architecture has been used. The circuit has been fabricated in a 130 …
single-stage cascode architecture has been used. The circuit has been fabricated in a 130 …
168-195 GHz power amplifier with output power larger than 18 dBm in BiCMOS technology
This paper presents a 4-way combined G-band power amplifier (PA) fabricated with a 130-
nm SiGe BiCMOS process. First, a single-ended PA based on the cascode topology (CT) is …
nm SiGe BiCMOS process. First, a single-ended PA based on the cascode topology (CT) is …
A broadband power amplifier in 130-nm SiGe BiCMOS technology
This letter describes an ultrabroadband power amplifier (PA) in a 130-nm SiGe: C BiCMOS
technology. To achieve this broadband while keeping a compact chip size, an on-chip …
technology. To achieve this broadband while keeping a compact chip size, an on-chip …
4.5 A 13.5 dBm fully integrated 200-to-255GHz power amplifier with a 4-way power combiner in SiGe: C BiCMOS
MH Eissa, D Kissinger - 2019 IEEE International Solid-State …, 2019 - ieeexplore.ieee.org
In order to efficiently utilize the frequency band above 200GHz for radar and communication
applications, enough transmitted output power is essential to overcome the elevated path …
applications, enough transmitted output power is essential to overcome the elevated path …
An 18 dBm 155-180 GHz SiGe power amplifier using a 4-way T-junction combining network
M Kucharski, HJ Ng, D Kissinger - ESSCIRC 2019-IEEE 45th …, 2019 - ieeexplore.ieee.org
This paper presents a 4-way power amplifier (PA) using a T-junction network for efficient
power combining. The circuit was implemented using a 130 nm SiGe BiCMOS technology …
power combining. The circuit was implemented using a 130 nm SiGe BiCMOS technology …
A 13.5-dBm 200–255-GHz 4-way power amplifier and frequency source in 130-nm BiCMOS
MH Eissa, A Malignaggi… - IEEE Solid-State Circuits …, 2019 - ieeexplore.ieee.org
In this letter, a wideband power amplifier (PA) and a frequency source (FS) at 240 GHz are
presented in 130-nm BiCMOS technology with f T/f max= 300/500 GHz. Two circuits are …
presented in 130-nm BiCMOS technology with f T/f max= 300/500 GHz. Two circuits are …
A broadband 300 GHz power amplifier in a 130 nm SiGe BiCMOS technology for communication applications
A broadband three-stage pseudo-differential SiGe-interconnection bipolar transistor (HBT)
power amplifier (PA) for high-speed communication at around 300 GHz is presented. The …
power amplifier (PA) for high-speed communication at around 300 GHz is presented. The …
220–320-GHz J-band 4-way power amplifier in advanced 130-nm BiCMOS technology
E Mohamed, G Fischer, T Mausolf… - IEEE Microwave and …, 2022 - ieeexplore.ieee.org
A power combined wideband power amplifier (PA) covering the-band (220–320 GHz) is
presented in 130-nm BiCMOS technology. The input power is split by two cascaded 1-to-2 …
presented in 130-nm BiCMOS technology. The input power is split by two cascaded 1-to-2 …
A SiGe-based broadband 100–180-GHz differential power amplifier with 11 dBm peak output power and> 1.3 THz GBW
A high-gain broadband power amplifier (PA) implemented in a 130-nm SiGe BiCMOS
technology is presented. The architecture is based on a class-A four stage fully-differential …
technology is presented. The architecture is based on a class-A four stage fully-differential …