Performance limits and design techniques for millimeter-wave amplifiers employing switches
for multiband operation are presented in this article. A bidirectional dual-band amplifier is …

This paper describes a novel, bi-directional millimetre-wave amplifier, which relies upon the
inherent symmetry of devices like FETs or HEMTs. The direction of amplification can be …

A frequency reconfigurable dual-band power amplifier (PA) with reconfigurable transmission
line transformers (TLT) is presented, which can be operated at both the n257 (26.5-29.5 …

The authors present three amplifiers, operating at 36, 40 and 50 GHz implemented in a low-
cost 0.8 um Si/SiGe HBT technology which features an fT and fMAX of 80 GHz. Each …

This brief presents a switchless dual-band low-noise amplifier (LNA) that can be
reconfigured to include n260 (37–40 GHz) and n262 (47.2–48.2 GHz) millimeter-wave (mm …

A differential low-noise amplifier (LNA) for the 5G n257 band and a frequency reconfigurable
differential LNA for both the 5G n257 and n260 bands (26.5–29.5 and 37–40 GHz) …

We have developed an F-band (90 to 140 GHz) bidirectional amplifier MMIC using a 75-nm
InP HEMT technology for short-range millimeter-wave multi-gigabit communication systems …

In this article, novel single-and dual-band reconfigurable microwave component (RMC)
designs with very compact circuit sizes are proposed, which can be reconfigured into …

The ubiquitous use of electronic devices has led to an explosive increase in the amount of
data transfer across the globe. Several applications such as media sharing, cloud …

A wideband 260 to 304 GHz (H-band) heterodyne receiver is formed by an MMIC chip set
cascading a low-noise amplifier, resistive mixer with integrated frequency-doubler, LO …