Back-gate bias effect on the linearity of pocket doped FDSOI MOSFET
In this article, we investigate the feasibility of enhancing the linearity Figures of Merit (FoMs)
by introducing pocket implant in the source/drain regions of the FDSOI MOSFET with ground …
by introducing pocket implant in the source/drain regions of the FDSOI MOSFET with ground …
A study of workfunction variation in pocket doped fd-soi technology towards temperature analysis
This paper focuses on a detailed study of workfunction variation to modulate the barrier
height in fully depleted silicon on insulator (FD-SOI) technology including pocket doping …
height in fully depleted silicon on insulator (FD-SOI) technology including pocket doping …
New mobility model for accurate modeling of transconductance in FDSOI MOSFETs
Anomalous transconductance with nonmono-tonic back-gate bias dependence observed in
the fully depleted silicon-on-insulator (FDSOI) MOSFET with thick front-gate oxide is …
the fully depleted silicon-on-insulator (FDSOI) MOSFET with thick front-gate oxide is …
Analytical model for interface traps-dependent back bias capability and variability in ultrathin body and box fdsoi mosfets
W Chen, L Cai, X Liu, G Du - IEEE Transactions on Electron …, 2020 - ieeexplore.ieee.org
Independent back bias in the ultrathin body and Box (UTBB) fully depleted silicon-on-
insulator (FDSOI) serves as the critical knob for exploiting the performance and power …
insulator (FDSOI) serves as the critical knob for exploiting the performance and power …
[HTML][HTML] An improved subthreshold swing expression accounting for back-gate bias in FDSOI FETs
In a MOSFET transistor, the subthreshold swing defines the switching efficiency, and the
associated slope factor, or so-called body factor, is a critical parameter in charge-based …
associated slope factor, or so-called body factor, is a critical parameter in charge-based …
Effects of scaling on analog FoMs of UTBB FD-SOI MOS transistors: a detailed analysis
MS Bhoir, NR Mohapatra - IEEE Transactions on Electron …, 2020 - ieeexplore.ieee.org
In this article, the combined effect of BOX thickness (TBOX) and ground-plane (GP) doping
(NGP) on channel carrier mobility and analog figures of merit (FoMs) is investigated. It is …
(NGP) on channel carrier mobility and analog figures of merit (FoMs) is investigated. It is …
Effect of parasitic elements on UTBB FD SOI MOSFETs RF figures of merit
This work details the harmful effect of parasitic resistances and capacitances on RF figures
of merit (FoM) of ultra-thin body and thin buried oxide (UTBB) FD SOI n-MOSFETs. It is …
of merit (FoM) of ultra-thin body and thin buried oxide (UTBB) FD SOI n-MOSFETs. It is …
Electrostatic investigation of intended source drain ultra thin body FD-SOI MOSFET
VK Mishra, N Rao - Silicon, 2020 - Springer
In this paper, the proposed modified source and modified drain fully depleted silicon-on-
insulator metal oxide semiconductor field effect transistor (FD-SOI MOSFET) presents better …
insulator metal oxide semiconductor field effect transistor (FD-SOI MOSFET) presents better …
Influence of the gate height engineering on the intrinsic parameters of UDG-MOSFETs with nonquasi static effect
This paper presents the results of a systematic theoretical investigation on the impact of gate
height on the analog and radio-frequency (RF) performances of underlap-FinFET devices …
height on the analog and radio-frequency (RF) performances of underlap-FinFET devices …
Potential Well Based FDSOI MOSFET: A Novel Planar Device for 10 nm Gate Length
S Qureshi, S Mehrotra - 2019 IEEE SOI-3D-Subthreshold …, 2019 - ieeexplore.ieee.org
A novel planar device having potential wells (PW) in the source and drain regions of
MOSFET is reported. The device was realized by introducing wells in the BOX under …
MOSFET is reported. The device was realized by introducing wells in the BOX under …