GaAs nanowire solar cells are being proposed as one of the candidates to surpass the
Shockley-Quiesser limit and create an ultimate efficiency solar cell. To produce these …

We demonstrate a novel and rapid method for nanowire (NW) solar cell processing. NW
arrays were embedded in photoresist. The strong absorption of light in the NWs leads to self …

A strategic and diverse set of passivation methods for gallium arsenide nanowires
wasstudied. Using a time-resolved photoluminescence setup at100 Kand300 K, the …

Silicon nanowires are attractive for photovoltaic applications where they can be used along
with bulk silicon in an all-Si tandem solar cell. The larger band gap, caused by the quantum …

Abstract Metal Nano-particle Assisted Chemical Etching (MNpACE) is an extraordinary
developed wet etching method for producing uniform semiconductor nanostructure (silicon …

In the past decade the usage of solar energy production has increased rapidly and has be‐-
come a reasonable alternative to fossil energy sources. Solar energy conversion is a chal …

Silicon nanostructures are one of the candidates for tomorrow technologies due to its novel
physical properties. High-aspect-ratio silicon nanostructures have been proved as effective …

Innovative material and processing concepts are needed to further enhance the
performance of complementary metal-oxide-semiconductor (CMOS) transistors-based …

GaAs/AlGaAs based nanowires are promising candidates for photovoltaic applications due
to their high absorption coefficient, low surface reflection, and efficient collection of …

We report on the growth and electro-optical studies of photovoltaic properties of GaAsP
nanowires. Low density GaAsP nanowires were grown by Au assisted MOVPE on Si (001) …